Wordline driver circuit for EEPROM memory cell

• US 5,265,052 A
• Filed: 06/29/1992
• Issued: 11/23/1993
• Est. Priority Date: 07/20/1989
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Gill Manzur, Lin, Sung-Wei, Imondi, Giuliano, D'Arrigo, Sebastiano
• Primary Examiner(s): CLAWSON JR, JOSEPH
• Application Number:
  US07/909,526
• Time in Patent Office: 512 Days
• Field of Search: 365/230.06, 365/185, 365/104, 365/218, 365/226, 365/189.09, 365/203, 365/204, 365/189.11
• US Class Current: 365/185.23
• CPC Class Codes: G11C 16/12 Programming voltage switching circuits
• CPC Class Codes: G11C 8/08 Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Abstract

A circuit for applying reading, programming and erasing voltages to a wordline in a floating-gate-type EEPROM cell array comprising a positive voltage switching circuit, a first isolating transistor, and a second isolating transistor. The positive voltage switching circuit may include an inverter with feedback transistor and a third isolating transistor. In one embodiment, the positive voltage switching circuit is capable of switching up to three positive voltage values and reference voltage to the wordline terminal.

Claims

1. A circuit for applying voltages to a wordline in a floating-gate memory cell array, comprising;

a first voltage supply circuit for supplying at least a first voltage to a first node;

a second voltage supply circuit for supplying at least a second voltage to a second node;

a third voltage supply circuit for selectively supplying a third voltage to the wordline;

a switching circuit for selectively coupling one of said first voltage supply circuit and said second voltage supply circuit to an output node, the switching circuit including an inverter having a first transistor and a second transistor with current paths connected in series between said first node and said second node, the output node connected between the current paths of said first transistor and said second transistor; and

a first isolating transistor having a current path coupled between said output node and the wordline for isolating the switching circuit from the wordline when said third voltage supply circuit supplies said third voltage to the wordline, said first isolating transistor has a substrate coupled to said first node.

2. The circuit of claim 1, in which said first voltage and said second voltage are greater than said third voltage.

3. The circuit of claim 2, in which said first voltage is positive, said second voltage is ground, and said third voltage is negative.

4. The circuit of claim 1, in which said first voltage supply circuit includes a programming voltage source, a sense voltage source, and a switch for selectively coupling one of said programming voltage source and said sense voltage source to said

5. The circuit of claim 1, in which said second voltage supply circuit includes a disturb-protect voltage source, a reference voltage source, and a switch for selectively coupling one of said disturb-protect voltage source and said reference voltage source to said second node.

6. The circuit of claim 1, in which said third voltage supply circuit includes an erase voltage source and a second isolating transistor having a current path coupled between said erase voltage source and the wordline.

7. The circuit of claim 6, in which said erase voltage source supplies negative voltage pulses when active and has a high impedance when not active.

8. The circuit of claim 6, in which said second isolating transistor has a control electrode coupled to said erase voltage source.

9. The circuit of claim 6, in which said second isolating transistor has a substrate coupled to said first node.

10. The circuit of claim 1, in which said first transistor and said first isolating transistor are of a first conductivity type and said second transistor is of a second conductivity type opposite said first conductivity type.

11. The circuit of claim 10, in which said first transistor and said first isolating transistor are n-channel field effect transistors and said second transistor is a p-channel field effect transistor.

12. The circuit of claim 1, in which said first voltage supply circuit includes a programming voltage source, a sense voltage source, and a first switch for selectively coupling one of said programming voltage source and said sense voltage source to said first node;

said second voltage supply circuit includes a disturb-protect voltage source, a reference voltage source, and a second switch for selectively coupling one of said disturb-protect voltage source and said reference voltage source to said second node; and

said third voltage supply circuit includes an erase voltage source and a second isolating transistor having a current path coupled between said erase voltage source and the wordline.

13. The circuit of claim 12, further including:

a supply voltage source;

a signalling voltage source, said signalling voltage source supplying a voltage less than voltages supplied by supply voltage source, said programming voltage source, said sense voltage source, said disturb-protect voltage source, and said reference voltage source and greater than a voltage supplied by said erasing voltage source; and

a third switch for selectively coupling one of said supply voltage source, said sense voltage source, and said signalling voltage source to a control electrode of said first isolating transistor.

14. The circuit of claim 13, further including:

a fourth switch for selectively coupling one of said supply voltage source and said reference voltage source to control electrodes of said first and second transistors.

15. The circuit of claim 14, further including:

a third isolating transistor having a current path coupled between said third switch and said control electrodes of said first and second transistors.

16. The circuit of claim 14, in which said programming voltage source supplies a voltage in the range of +12 to +16 volts, said sense voltage source supplies a voltage of approximately +3 volts, said disturb-protect voltage source supplies a voltage in the range of +6 to +8 volts, said reference voltage source supplies ground potential, said erase voltage source supplies a voltage in the range -12 to -14 volts, said supply voltage source supplies a voltage in the range of +4 to +6 volts, and said signalling voltage source supplies a voltage in the range of -3 to -5 volts.

17. The circuit of claim 16, in which said first transistor, said first isolating transistor, and said second isolating transistor have substrates coupled to said first node.

18. The circuit of claim 1, further including:

a feedback transistor having a current path coupled between said first node and control electrodes of said first and second transistors and a control electrode coupled to said output node.

19. The circuit of claim 18, in which said feedback transistor has a substrate coupled to said first node.