Method for manufacturing a solid state image sensing device using transparent thermosetting resin layers

• US 5,266,501 A
• Filed: 05/06/1992
• Issued: 11/30/1993
• Est. Priority Date: 05/09/1991
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Imai, Takehiko
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Graybill, David E.
• Application Number:
  US07/879,013
• Time in Patent Office: 573 Days
• Field of Search: 437/2, 437/180, 437/211, 437/228, 437/229, 437/904
• US Class Current: 438/60
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216

Abstract

A method of manufacturing a solid state image sensing device comprising the steps of: forming and maintaining a color filter layer, a lens layer and/or a light reflection preventing layer via a transparent thermosetting resin layer, on a semiconductor substrate; forming a mask layer of a photosetting resin to expose an electrode on the semiconductor substrate surface after the layer forming and maintaining step; and exposing the electrode surface by selectively removing the transparent thermosetting resin layers by use of the mask layer.

Claims

1. A method of manufacturing a solid state image sensing device, comprising the steps of:

forming a photosensitive portion and a CCD portion on a semiconductor substrate surface;

forming an electrode on the semiconductor substrate surface;

forming a first transparent thermosetting resin layer all over the surface and heating the formed first resin layer;

forming a light reflection preventing layer away from said photosensitive portion on the first transparent thermosetting resin layer;

forming a second transparent thermosetting resin layer all over the surface and heating the formed second resin layer;

selectively forming a lens layer over the photosensitive portion on the second transparent thermosetting resin layer;

forming a third transparent thermosetting resin layer all over the surface thereof and heating the formed third resin layer;

forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and

exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.

2. A method of manufacturing a solid state image sensing device, comprising the steps of:

forming a photosensitive portion and a CCD portion on a semiconductor substrate surface;

forming an electrode on the semiconductor substrate surface;

forming a first transparent thermosetting resin layer all over the surface thereof and heating the formed first resin layer;

forming second transparent thermosetting resin layers above said photosensitive portion on the formed first transparent thermosetting resin layer;

forming a third transparent thermosetting resin layer on the second transparent thermosetting resin layer and heating the formed third resin layer;

selectively forming a condenser lens layer over the photosensitive portion on the third transparent thermosetting resin layer;

forming a fourth transparent thermosetting resin layer all over the surface thereof and heating the formed fourth resin layer;

forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and

exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.

3. A method of manufacturing a solid state image sensing device, comprising the steps of:

forming a photosensitive portion and a CCD portion on a semiconductor substrate surface;

forming an electrode on the semiconductor substrate surface;

forming a first transparent thermosetting resin layer all over the surface thereof and heating the formed first resin layer;

forming second transparent thermosetting resin layers above said photosensitive portion on the formed first transparent thermosetting resin layer by sandwiching one of a plurality of color filter layers between two of the formed second resin layers, respectively and by heating the formed second resin layers, respectively;

forming a third transparent thermosetting resin layer on the uppermost color filter layer and heating the formed third resin layer;

forming a condenser lens layer over the photosensitive portion on the third transparent thermosetting resin layer;

forming a fourth transparent thermosetting resin layer all over the surface thereof and heating the formed fourth resin layer;

forming a photosensitive resin layer on the surface thereof, exposing the formed resin layer with a pattern for exposing a surface of said electrode, and forming a mask layer by development; and

exposing the electrode surface by selectively removing all the transparent thermosetting resin layers with the formed mask layer.