Plasma enhanced chemical vapor deposition of oxide film stack

• US 5,268,208 A
• Filed: 07/01/1991
• Issued: 12/07/1993
• Est. Priority Date: 07/01/1991
• Status: Expired due to Fees

• Current Assignee: Ford Motor Company
• Original Assignee: Ford Motor Company
• Inventors: Krisko, Annette J., Proscia, James W.
• Primary Examiner(s): PADGETT, MARIANNE L
• Application Number:
  US07/724,275
• Time in Patent Office: 890 Days
• Field of Search: 427/40, 427/74, 427/163, 427/164, 427/166, 427/167, 427/539, 427/537, 427/564, 427/573, 427/576
• US Class Current: 427/576
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: G02F 1/1524 Transition metal compounds
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/24975 No layer or component greater than 5 mils thick

Abstract

A plasma enhanced chemical vapor deposition method is provided for depositing an oxide film onto a substrate surface. Deposition is achieved even onto a surface of a glass or other relatively non-receptive substrate. A sub-film is deposited under plasma enhanced chemical vapor deposition conditions more strongly favoring deposition, followed by deposition of the desired oxide film under second plasma enhanced chemical vapor deposition conditions less strongly favoring deposition. High quality oxide films can be achieved by deposition at second plasma enhanced chemical vapor deposition conditions only marginally favoring deposition over etching.

Claims

1. A plasma enhanced chemical vapor deposition method of depositing tungsten oxide onto a surface of a substrate, comprising the steps of:

a) depositing a sub-film of amorphous tungsten oxide onto the surface at first plasma enhanced chemical vapor deposition conditions, including a first deposition temperature between room temperature and 200°

C.; and

b) then depositing a film of tungsten oxide onto the sub-film at second plasma enhanced chemical vapor deposition conditions less favorable to deposition than the first plasma enhanced chemical vapor deposition conditions, including a second deposition temperature between 225°

C. and 350°

C.

2. The plasma enhanced chemical vapor deposition method of claim 1 wherein the film of tungsten oxide is 500 to 10,000 Angstroms thick.

3. The plasma enhanced chemical vapor deposition method of claim 1 wherein the sub-film is 100 to 1,000 Angstroms thick.

4. The plasma enhanced chemical vapor deposition method of claim 1 wherein the substrate is a dielectric material.

5. The plasma enhanced chemical vapor deposition method of claim 1 wherein the substrate is soda-lime glass.

6. The plasma enhanced chemical vapor deposition method of claim 1 wherein the second plasma enhanced chemical vapor deposition conditions include a deposition atmosphere comprising a higher concentration of fluorine-containing reactant gas than the first plasma enhanced chemical vapor deposition conditions.

7. The plasma enhanced chemical vapor deposition method of claim 1 wherein the second plasma enhanced chemical vapor deposition conditions include more energetic ion bombardment under an applied electrical field than do the first plasma enhanced chemical vapor deposition conditions.

8. A plasma enhanced chemical vapor deposition method of depositing crystalline tungsten oxide onto a surface of a glazing substrate, comprising the steps of:

a) depositing a sub-film of amorphous tungsten oxide onto the surface at first plasma enhanced chemical vapor deposition conditions, including a first deposition temperature between room temperature and 200°

C.; and

b) then depositing a film of crystalline tungsten oxide onto the sub-film at second plasma enhanced chemical vapor deposition conditions less favoring deposition over etching than do the first plasma enhanced chemical vapor deposition conditions, including a second deposition temperature between 225°

C. and 350°

C.

9. The plasma enhanced chemical vapor deposition method of claim 8 wherein the crystalline tungsten oxide is doped to increase conductivity.

10. The plasma enhanced chemical vapor deposition method of claim 8 wherein the crystalline tungsten oxide is fluorine doped.

11. The plasma enhanced chemical vapor deposition method of claim 8 wherein the crystalline tungsten oxide and the amorphous tungsten oxide both are fluorine doped.

12. The plasma enhanced chemical vapor deposition method of claim 8 wherein the crystalline tungsten oxide is oxygen deficient to increase conductivity.

13. A plasma enhanced chemical vapor deposition method of depositing a substantially transparent solar load reduction film stack on a substantially transparent glass sheet, comprising:

a) depositing a 10 to 100 nm thick sub-film of amorphous tungsten oxide onto the surface at first plasma enhanced chemical vapor deposition conditions which include (i) a first deposition atmosphere comprising essentially tungsten hexafluoride, hydrogen and oxygen, and (ii) a first deposition temperature between room temperature and 200°

C.; and

b) depositing a 200 to 400 nm thick film of substantially stoichiometric, crystalline, fluorine doped tungsten oxide onto the sub-film at second plasma enhanced chemical vapor deposition conditions less favorable to deposition than the first plasma enhanced chemical vapor deposition conditions, the second plasma enhanced chemical vapor deposition conditions including (i) a second deposition atmosphere comprising essentially tungsten hexafluoride, carbon tetrafluoride, hydrogen and oxygen, and (ii) a second deposition temperature between 225°

C. and 350°

C.

14. The plasma enhanced chemical vapor deposition method of claim 13 further comprising the step of depositing a protective film onto the film of substantially stoichiometric, crystalline, fluorine doped tungsten oxide.

15. The plasma enhanced chemical vapor deposition method of claim 13 wherein the protective film consists essentially of silicon dioxide.