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Method of fabricating an integrated circuit interconnection

  • US 5,268,329 A
  • Filed: 11/08/1991
  • Issued: 12/07/1993
  • Est. Priority Date: 05/31/1990
  • Status: Expired due to Term
First Claim
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1. A method of semiconductor integrated circuit fabrication comprising:

  • forming a dielectric covering a raised first aluminum-rich conductor;

    forming an opening in said dielectric, said opening exposing a portion of said first conductor;

    forming a layer of refractory metal silicide upon said dielectric and within said opening and contacting said raised first conductor;

    forming a layer of titanium nitride upon said layer of refractory metal silicide by reactive sputter deposition from a refractory metal target in a nitrogen atmosphere;

    forming a second aluminum-rich conductive material layer contacting said titanium nitride layer within said opening and contacting said titanium nitride layer upon said dielectric;

    patterning said second conductive layer and said titanium nitride layer and said refractory metal silicide layer to form a runner.

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