Semiconductor device coated with a fluorena-containing polyiimide and a process of preparing

• US 5,270,090 A
• Filed: 11/17/1992
• Issued: 12/14/1993
• Est. Priority Date: 04/03/1987
• Status: Expired due to Term

• Current Assignee: Daikin Industries Ltd
• Original Assignee: Daikin Industries Ltd
• Inventors: Kobayashi, Tsutomu, Kubo, Motonobu, Ohsaka, Yohnosuke
• Primary Examiner(s): Kight, III, John
• Assistant Examiner(s): HAMPTON HIGHTOWER, PATRICIA
• Application Number:
  US07/950,326
• Time in Patent Office: 392 Days
• Field of Search: 428/67, 428/76, 428/209, 428/473.5, 357/70
• US Class Current: 428/67
• CPC Class Codes: B32B 1/00 Layered products having a non-planar shape
• CPC Class Codes: B32B 27/00 Layered products comprising a layer of synthetic resin fibrous or filamentary layer made of a synthetic resin B32B5/02; particulate layer made of a synthetic resin B32B5/16; foamed layer made of a synthetic resin B32B5/18
• CPC Class Codes: C08G 73/10 Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: Y10T 428/22 Nonparticulate element embedded or inlaid in substrate and visible
• CPC Class Codes: Y10T 428/239 Complete cover or casing
• CPC Class Codes: Y10T 428/24917 including metal layer
• CPC Class Codes: Y10T 428/31721 Of polyimide

Abstract

A novel fluorine-containing aromatic compound of the formula: ##STR1## wherein X is ##STR2## in which R_f is a perfluoroalkyl group having 1 to 10 carbon atoms, R_f, is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 or 1, s is an integer of 0 to 5 and t is an integer of 0 to 5,

Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and

each A is independently ##STR3## in which D is an amino, carboxyl, hydroxyl, methyl or haloformyl group, and n is an integer of 1 or 2, or ##STR4## can be used to derive various compounds, some of which are useful for preparing a fluorine-containing epoxy compound or polyimide with good properties.

Claims

1. A semiconductor device which is coated with a fluorine-containing polyimide of the formula:

##STR87## wherein R¹ is selected from the group consisting of ##STR88## wherein R³ is --O--, --CO--, --SO₂, --C(CH₃)₂ --, --C(CH₃)₂ --, ##STR89## wherein R⁴ is --C₆ H₄ --, --C₆ H₄ O--C₆ H₄ -- or --C₆ H₄ --O--C₆ H₄ --O--C₆ H₄ -- and ##STR90## wherein R⁵ is --O--, --O--(CH₂)₄ --O--, --O--(CH₂)₆ --O--, ##STR91## R² is selected from the group consisting of ##STR92## wherein R⁶ is --O--, --CO--, --S--, --CH₂ --, --C(CH₃)₂, --C(CF₃)₂ --, ##STR93## or --SI(CH₃)₂ --, and ##STR94## wherein R⁷ is --O--, --SO₂ --, --CH₂ --, --CO--, --C(CH₃)₂ -- or --S--, with the proviso that when R¹ is group (i), R² is group (ii), and with the further proviso that at least one of R¹ and R² contains a group of the formula;

##STR95## wherein X is ##STR96## in which R_f is a perfluoroalkyl group having 1 to 10 carbon atoms, R_f '"'"' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 or 1, s is an integer of 0 to 5 and t is an integer of 0 to 5, and

Y is X, a hydrogen atoms, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and

n is an integer not less than 10.

2. The semiconductor device according to claim 1, wherein the fluorine-containing polyimide is of the formula:

##STR97## wherein X is ##STR98## in which R_f is a perfluoroalkyl group having 1 to 10 carbon atoms, R_f '"'"' is a perfluoroalkyl group having 1 to 12 carbon atonms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 or 1, s is an integer of 0 to 5 and t is an integer of 0 to 5,

Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and

n is an integer not less than 10.

3. The semiconductor device according to claim 1, wherein the fluorine-containing polyimide is of the formula:

##STR99## wherein R¹ is as defined in claim 1, X is ##STR100## in which R_f is a perfluoroalkyl group having 1 to 10 carbon atoms, R_f '"'"' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 to 1, s is an integer of 0 to 5 and t is an integer of 0 to 5,

Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and

n is an integer not less than 10.

4. The semiconductor device according to claim 1, wherein the fluorine-containing polyimide is of the formula:

##STR101## wherein R² is as defined in claim 19, X is ##STR102## in which R_f is a perfluoroalkyl group having 1 to 10 carbon atoms, R_f '"'"' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 to 1, s is an integer of 0 to 5 and t is an integer of 0 to 5,

Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and

n is an integer not less than 10.

5. A process for preparing a semiconductor device which comprises coating a polyamic acid of the formula:

##STR103## on a semiconductor element and lead wires and thermally curing the polyamic acid so that a resultant polyimide adheres to the semiconductor element and lead wires, wherein R¹ is a residue which is formed by removing four carboxylic acid groups from an aromatic tetracarboxylic acid,

R² is a residue which is formed by removing two amino groups from an aromatic diamine, with the proviso that at least one of R¹ and R² contains a group of the formula;

##STR104## wherein X is ##STR105## in which R_f is a perfluoroalkyl group having 1 to 10 carbon atoms, R_f '"'"' is a perfluoroalkyl group having 1 to 12 carbon atoms, p is an integer of 1 to 3, q is an integer of 0 to 3, r is 0 to 1, s is an integer of 0 to 5 and t is an integer of 0 to 5, and

Y is X, a hydrogen atom, an alkyl group having 1 to 8 carbon atoms or a fluoroalkyl group having 1 to 8 carbon atoms, and

n is an integer not less than 2.