Method and apparatus for semiconductor device fabrication diagnosis and prognosis

• US 5,270,222 A
• Filed: 12/31/1990
• Issued: 12/14/1993
• Est. Priority Date: 12/31/1990
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Moslehi, Mehrdad M.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): OJAN, OURMAZD
• Application Number:
  US07/638,468
• Time in Patent Office: 1,079 Days
• Field of Search: 437/8, 437/173, 437/946
• US Class Current: 438/7
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: G01B 11/0616 of coating
• CPC Class Codes: G01B 11/303 using photoelectric detection means
• CPC Class Codes: G03F 7/70483 Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67276 Production flow monitoring, e.g. for increasing throughput program-control systems per se G05B19/00, e.g. total factory control G05B19/418
• CPC Class Codes: H01L 21/682 Mask-wafer alignment in general G03F7/70, G03F9/70
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A sensor (210) for diagnosis and prognosis of semiconductor device fabrication processes measures specular, scattered, and total surface reflectances and transmittances of semiconductor wafers (124). The sensor (210) comprises a sensor arm (212) and an opto-electronic control box (214), for directing coherent electromagnetic or optical energy in the direction of semiconductor wafer (124). Opto-electronic control box (214) includes circuitry for measuring the amounts of laser powers coherently reflected from and transmitted through the semiconductor wafer (124) surface and the amounts of electromagnetic powers scatter reflected from and transmitted through the semiconductor wafer (124) surface. The present invention determines specular, scattered, and total reflectance and transmittance as well as surface roughness values for semiconductor wafer (124) based on measurements of coherent and scatter reflected and transmitted laser powers. The sensor (210) of the present invention can also provide a go/no-go test of semiconductor fabrication process quality. A process control computer associates with the sensor (210) to respond to spectral reflectance and transmittance measurements yielding surface roughness and thickness measurements as well as diagnosis/prognosis analysis results and control signals.

Claims

1. A method for diagnosis and prognosis of semiconductor wafer fabrication processes, comprising the steps of:

directing electromagnetic power in the direction of a semiconductor wafer;

measuring the amount of electromagnetic power reflected from said semiconductor wafer;

comparing said reflected electromagnetic energy to a reference value;

measuring the amount of electromagnetic power coherently reflected from the semiconductor wafer;

measuring the amount of electromagnetic power scatter reflected from the semiconductor wafer; and

determining semiconductor surface roughness as a function of said electromagnetic power, said reflected electromagnetic power, and said scatter reflected electromagnetic power.

2. The method of claim 1, further comprising the steps of:

receiving said reflected electromagnetic power using a reflection sensor; and

receiving said scatter reflected electromagnetic power using a scatter reflection sensor, including an imaging lens for focusing said scatter reflected electromagnetic power.

3. The method of claim 1, further comprising the step of calculating semiconductor wafer metal film thickness as a function of said semiconductor wafer surface roughness.

4. The method of claim 1, further comprising the step of calculating semiconductor wafer polycrystalline film thickness as a function of said semiconductor wafer surface roughness.

5. The method of claim 1, further comprising the step of comparing total spectral reflectivity for metal film versus metal film thickness for semiconductor wafer process diagnosis and prognosis analysis.

6. A method for diagnosis and prognosis of semiconductor wafer fabrication processes, comprising the steps of:

directing electromagnetic energy in the direction of a semiconductor wafer;

measuring at least a portion of the electromagnetic power reflected from said semiconductor wafer;

comparing said measured portion of the reflected electromagnetic power to reference values, said reference values comprising expected values for reflected electromagnetic powers for a given semiconductor wafer film thickness; and

wherein said measured portion can be either specular, scattered or total reflected electromagnetic power, and wherein said expected values can be of specular, scattered or total reflected electromagnetic power.

7. A method for diagnosis and prognosis of semiconductor wafer fabrication processes, comprising the steps of:

directing electromagnetic energy in the direction of a semiconductor wafer;

measuring at least a portion of the electromagnetic power reflected from said semiconductor wafer;

comparing said measured portion of the reflected electromagnetic power to reference values, said reference values comprising expected values for reflected electromagnetic powers for a given semiconductor wafer film thickness; and

controlling a semiconductor wafer fabrication process in response to said comparison of said measured portion of the reflected electromagnetic power to said expected values for reflected electromagnetic powers, wherein said measured portion of the reflected electromagnetic power can be either specular, scattered, or total reflected electromagnetic power, and wherein said expected values can be of specular, scattered, or total reflected electromagnetic power.

8. A method for diagnosis and prognosis of semiconductor wafer fabrication processes, comprising the steps of:

directing electromagnetic energy in the direction of a semiconductor wafer;

measuring at least a portion of the electromagnetic power reflected from said semiconductor wafer;

comparing said measured electromagnetic power to reference values, said reference values comprising expected values for reflected electromagnetic powers for a given semiconductor wafer film thickness; and

wherein said electromagnetic energy source comprises a coherent laser energy source which emits a 1.3 μ

m wavelength signal.

9. A method for diagnosis and prognosis of semiconductor wafer fabrication processes, comprising the steps of:

directing electromagnetic energy in the direction of a semiconductor wafer;

measuring at least a portion of the electromagnetic power reflected from said semiconductor wafer;

comparing said measured electromagnetic power to reference values, said reference values comprising expected values for reflected electromagnetic powers for a given semiconductor wafer film thickness; and

wherein said electromagnetic energy source comprises a coherent laser energy source which emits a 1.55 μ

m wavelength signal.

10. A method for diagnosis and prognosis of semiconductor wafer fabrication processes, comprising the steps of:

directing electromagnetic energy in the direction of a semiconductor wafer;

measuring at least a portion of the electromagnetic power reflected from said semiconductor wafer;

comparing said measured electromagnetic power to reference values, said reference values comprising expected values for reflected electromagnetic powers for a given semiconductor wafer film thickness; and

measuring the amount of electromagnetic power coherently reflected from the semiconductor wafer;

measuring the amount of electromagnetic power scatter reflected from the semiconductor wafer; and

determining semiconductor wafer surface roughness based on measurements of said coherently reflected electromagnetic power, and said scatter reflected electromagnetic power.

11. The method of claim 10, further comprising the steps of receiving said coherently reflected electromagnetic power using a coherent reflection sensor;

and receiving said scatter reflected electromagnetic power using a scatter reflection sensor, including an imaging lens for focusing said scatter reflected electromagnetic power, and an imaging lens for focusing said coherently reflected electromagnetic power.

12. The method of claim 10, further comprising the step of calculating semiconductor wafer metal film thickness as a function of said semiconductor wafer surface roughness.

13. The method of claim 10, further comprising the step of calculating semiconductor wafer polycrystalline film thickness as a function of said semiconductor wafer surface roughness.

14. The method of claim 10, further comprising the step of determining specular, scattered, and total spectral reflectivity for metal film versus metal film thickness and scattering parameter for semiconductor wafer processing diagnosis and prognosis.