Method of producing semiconductor device

• US 5,270,253 A
• Filed: 06/24/1991
• Issued: 12/14/1993
• Est. Priority Date: 01/27/1986
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Arai, Hajime, Furuta, Isao, Kuroki, Hidefumi, Arima, Junichi, Hirata, Yoshihiro, Harada, Shigeru
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): NGUYEN, TUAN H
• Application Number:
  US07/719,109
• Time in Patent Office: 904 Days
• Field of Search: 437/183, 437/187, 437/203, 437/190, 437/245, 437/246, 437/89, 437/209, 148/DIG. 26, 148/DIG. 50, 156/569.1
• US Class Current: 438/612
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 23/53209 based on metals, e.g. alloys, metal silicides H01L23/53285 takes precedence
• CPC Class Codes: H01L 23/5328 containing conductive organic materials or pastes, e.g. conductive adhesives, inks
• CPC Class Codes: H01L 24/02 Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: Y10S 148/026 Deposition thru hole in mask

Abstract

A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness and so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

Claims

1. A method of producing a semiconductor device comprising:

a first step of forming an electrode portion on a wafer to obtain an electrical contact with a substrate;

a second step of forming a passivation film on said wafer except for said electrode portion;

a third step of forming an insulating film of predetermined thickness on the entire surface of said wafer;

a fourth step of removing a portion of said insulating film to form a concave portion on said electrode portion;

a fifth step of depositing conductive material in said concave portion up to a substantially constant height and contacting said electrode portion, further including depositing conductive material on the insulating film; and

a sixth step of removing said conductive material from said insulating film by conducting a uniform etching on the surface of said conductive material to produce a projecting conductor of said conductive material which is used for bonding to a substrate.

2. A method of producing a semiconductor device as defined in claim 1, which further includes after said second step a step of producing on said electrode portion a barrier metal layer comprising a single layer or a multi layer of chrome, copper, nickel, titanium, silver, gold, or a metal alloy including any of these metals.

3. A method of producing a semiconductor device as defined in claim 1, wherein said electrode portion comprises aluminum, a high melting point metal, or a high melting point metal silicide.

4. A method of producing a semiconductor device as defined in claim 1, wherein said insulating film comprises a dry film.

5. A method of producing a semiconductor device as defined in claim 1, wherein said conductive material comprises a metal, a metal compound, or a conductive high polymer.

6. The method of claim 1 wherein the fourth step is performed by photolithography.

7. The method of claim 1 wherein the fifth step is performed by spin coating.

8. The method of producing a semiconductor device comprising the steps of:

(a) forming an electrode portion on a wafer to obtain electrical contact with a substrate;

(b) forming a passivation film on said wafer except for an electrode portion;

(c) forming an insulating film on the entire surface of the wafer;

(d) removing a portion of said insulating film to form a concave portion;

(e) depositing conductive material in said concave portion and as a flat surface on the insulating film; and

(f) removing the flat surface of the conductive material on the insulating film by uniform etching so as to produce a projecting conductor of said conductive material which is to be used for bonding to a substrate.

9. The method of claim 8 wherein the conductive material is solder.

10. The method of claim 8 wherein, substantially all of said insulating film is also removed in step (f).

11. The method of claim 13, wherein the film formed in step (c) is of a thickness of 50 to 500 microns;

and in step (e) the conductive material completely fills the concave portion so that when substantially all of said insulating film is removed a conductive bump of a height sufficient to effectively electrically connect the device to a substrate will be formed.

12. The method of producing a semiconductor device that includes a spacer and a projecting terminal for electrical attachment to a substrate comprising the steps of:

(a) forming an electrode portion on a wafer to obtain electrical contact with a substrate;

(b) forming a passivation film on said wafer except for an electrode portion;

(c) forming an insulating film on the entire surface of the wafer;

(d) removing a portion of said insulating film to form a concave portion;

(e) depositing conductive material in said concave portion and as a flat surface on the insulating film; and

(f) removing the flat surface of the conductive material on the insulating film by uniform etching thereby forming a projecting terminal of said conductive material beyond the insulating film, so that the semiconductor device can be bonded to a substrate by the use of the projecting terminal while using the insulating film as a spacer between the device and the substrate.