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Method for fabricating diodes for electrostatic discharge protection and voltage references

  • US 5,272,097 A
  • Filed: 04/07/1992
  • Issued: 12/21/1993
  • Est. Priority Date: 04/07/1992
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a semiconductor structure comprising the steps of:

  • a) forming within a first bulk region (1103) of a first conductivity type, a lightly doped source/drain region (1111) of a second conductivity type opposite said first conductivity type;

    b) forming within a second bulk region (1102) of said second conductivity type, a second conductivity type lightly doped portion (1110) of a first diode region;

    c) forming within said second bulk region (1102) a lightly doped source/drain region (1120) of said first conductivity type;

    d) forming within said first bulk region (1103) a first conductivity type lightly doped portion (1121) of a first diode region;

    e) forming within said first bulk region (1103) a second conductivity type portion (1114) of said first diode region;

    f) forming within said first bulk region (1103) a source/drain region (1115) of said second conductivity type;

    g) forming within said second bulk region (1102) a second diode region (1116) of said second conductivity type;

    h) forming within said first bulk region (1103) a second diode region (1119) of said first conductivity type;

    i) forming within said second bulk region (1102) a source/drain region (1118) of said first conductivity type; and

    j) forming within said second bulk region (1102) a first conductivity type portion (1117) of said first diode region,wherein said first bulk region comprises a lightly doped source/drain MOS device and a diode having said second conductivity type portion of said first diode region formed within said first bulk region serving as a first terminal of said diode and said second diode region within said first bulk region serves as a second terminal of said diode, andwherein said second bulk region comprises a lightly doped source/drain MOS device and a diode having said first conductivity type portion of said first diode region within said second bulk region serving as a first terminal of said diode and said second diode region within said second bulk region serves as a second terminal of said diode.

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