Method for fabricating diodes for electrostatic discharge protection and voltage references
First Claim
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1. A method of fabricating a semiconductor structure comprising the steps of:
- a) forming within a first bulk region (1103) of a first conductivity type, a lightly doped source/drain region (1111) of a second conductivity type opposite said first conductivity type;
b) forming within a second bulk region (1102) of said second conductivity type, a second conductivity type lightly doped portion (1110) of a first diode region;
c) forming within said second bulk region (1102) a lightly doped source/drain region (1120) of said first conductivity type;
d) forming within said first bulk region (1103) a first conductivity type lightly doped portion (1121) of a first diode region;
e) forming within said first bulk region (1103) a second conductivity type portion (1114) of said first diode region;
f) forming within said first bulk region (1103) a source/drain region (1115) of said second conductivity type;
g) forming within said second bulk region (1102) a second diode region (1116) of said second conductivity type;
h) forming within said first bulk region (1103) a second diode region (1119) of said first conductivity type;
i) forming within said second bulk region (1102) a source/drain region (1118) of said first conductivity type; and
j) forming within said second bulk region (1102) a first conductivity type portion (1117) of said first diode region,wherein said first bulk region comprises a lightly doped source/drain MOS device and a diode having said second conductivity type portion of said first diode region formed within said first bulk region serving as a first terminal of said diode and said second diode region within said first bulk region serves as a second terminal of said diode, andwherein said second bulk region comprises a lightly doped source/drain MOS device and a diode having said first conductivity type portion of said first diode region within said second bulk region serving as a first terminal of said diode and said second diode region within said second bulk region serves as a second terminal of said diode.
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Abstract
A novel process is taught for forming diodes simultaneously with the formation of typical prior art LDD MOS devices. The diodes thus formed have low breakdown voltages, making them suitable for use as voltage reference diodes, or diodes for ESD protection.
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Citations
18 Claims
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1. A method of fabricating a semiconductor structure comprising the steps of:
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a) forming within a first bulk region (1103) of a first conductivity type, a lightly doped source/drain region (1111) of a second conductivity type opposite said first conductivity type; b) forming within a second bulk region (1102) of said second conductivity type, a second conductivity type lightly doped portion (1110) of a first diode region; c) forming within said second bulk region (1102) a lightly doped source/drain region (1120) of said first conductivity type; d) forming within said first bulk region (1103) a first conductivity type lightly doped portion (1121) of a first diode region; e) forming within said first bulk region (1103) a second conductivity type portion (1114) of said first diode region; f) forming within said first bulk region (1103) a source/drain region (1115) of said second conductivity type; g) forming within said second bulk region (1102) a second diode region (1116) of said second conductivity type; h) forming within said first bulk region (1103) a second diode region (1119) of said first conductivity type; i) forming within said second bulk region (1102) a source/drain region (1118) of said first conductivity type; and j) forming within said second bulk region (1102) a first conductivity type portion (1117) of said first diode region, wherein said first bulk region comprises a lightly doped source/drain MOS device and a diode having said second conductivity type portion of said first diode region formed within said first bulk region serving as a first terminal of said diode and said second diode region within said first bulk region serves as a second terminal of said diode, and wherein said second bulk region comprises a lightly doped source/drain MOS device and a diode having said first conductivity type portion of said first diode region within said second bulk region serving as a first terminal of said diode and said second diode region within said second bulk region serves as a second terminal of said diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a semiconductor structure comprising the steps of:
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a) forming within a first bulk region (5103) of a first conductivity type, a lightly doped source/drain region (5111) of a second conductivity type opposite said first conductivity type; b) forming within one or more second bulk regions (5102) of said second conductivity type, a second conductivity type lightly doped portion (5110) of a first diode region; c) forming within said first bulk region (5103) a source/drain region (5115) of said second conductivity type; d) forming within said second bulk regions (5102) a second diode region (5116) of said second conductivity type; e) forming within said second bulk regions (5102) a source/drain region (5118) of said first conductivity type; and f) forming within said second bulk regions (5102) a first conductivity type portion (5117) of said first diode region, wherein said first bulk regions comprise a lightly doped source/drain MOS device, and wherein said second bulk regions comprise a MOS device and a diode having said first conductivity type portion of said first diode region within said second bulk regions serving as a first terminal of said diode and said second diode region within said second bulk regions serve as a second terminal of said diode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification