Method for cleaving a semiconductor crystal body

• US 5,272,114 A
• Filed: 09/21/1992
• Issued: 12/21/1993
• Est. Priority Date: 12/10/1990
• Status: Expired due to Fees

• Current Assignee: Amoco Corporation (BP PLC)
• Original Assignee: Amoco Corporation (BP PLC)
• Inventors: Mathius, Ronald P., van Berkum, Petrus A.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): HORTON, KENNETH
• Application Number:
  US07/950,635
• Time in Patent Office: 456 Days
• Field of Search: 437/226, 437/227, 148/DIG. 28, 148/DIG. 95, 148/DIG. 168
• US Class Current: 438/33
• CPC Class Codes: B28D 5/0011 with preliminary treatment, e.g. weakening by scoring
• CPC Class Codes: B28D 5/0023 rectilinearly
• CPC Class Codes: B28D 5/0052 Means for supporting or holding work during breaking means for conveying work to or discharging work from the breaking machine B28D5/0058
• CPC Class Codes: H01L 21/3043 Making grooves, e.g. cutting
• CPC Class Codes: H01L 21/30617 Anisotropic liquid etching
• CPC Class Codes: Y10T 225/12 With preliminary weakening

Abstract

A method for cleaving a semiconductor crystal body having a first surface and an opposite second surface, comprising the steps of forming a channel on the first surface of the semiconductor, scribing a portion of the second surface opposite the channel on the first surface, and mechanically cleaving the semiconductor along a plane defined by said channel on the first surface and said scribe on the second surface.

Claims

1. A method for cleaving a semiconductor crystal body having a first surface and an opposite second surface, comprising the steps of:

a) forming a channel on the first surface of the semiconductor, said channel including sidewalls and a bottom therebetween;

b) scribing a portion of a total length of the second surface opposite said channel and between the planes of said sidewalls thereof on the first surface; and

c) mechanically cleaving the semiconductor along a plane defined by said channel on the first surface and said scribe on the second surface.

2. The method of claim 1, wherein a plurality of parallel channels are formed on the first surface of the semiconductor.

3. The method of claim 1, wherein said channel extends across the first surface of the semiconductor.

4. The method of claim 2, wherein said formed channel is linear and includes substantially parallel side walls and a channel bottom therebetween.

5. The method of claim 2, wherein said channel forming step includes sawing up a substantially thin channel.

6. The method of claim 1, wherein said scribing step includes scribing a minor portion of the second surface in proximity to an edge of the semiconductor, opposite the channel on the first surface.

7. The method of claim 2, wherein a plurality of scribes on a minor portion of said second surface are made opposite to said channels on said first surface.

8. The method of claim 1, wherein said scribing step includes scribing a portion of said second surface centered with respect to said channel on said first surface.

9. The method of claim 4, wherein said semiconductor includes a thickness of about 4 mils or more from said channel bottom on the first surface to the scribe portion on the second surface opposite thereof.

10. The method of claim 1, wherein said semiconductor body is cleaved by aligning a rigid rod with said channel of said first surface, and applying a force in a direction substantially in alignment with said plane and said rod.

11. The method of claim 7, wherein said cleaving step is repeated for cleaving a plurality of individual components.

12. The method of claim 1, wherein said semiconductor crystal body comprises a plurality of semiconductor layers deposited epitaxially thereon, at least one of said layers when appropriately biased generates electromagnetic radiation.

13. The method of claim 1, additionally comprising the step of etching the formed channel after said channel forming step.

14. The method of claim 13, wherein said etching step includes applying an etchant to said channel, said etchant is selected from at least one member of the group consisting of:

H₂ SO₄, H₂ O₂ and H₂ O;

NaOH, H₂ O₂ and H₂ O; and

NH₄ OH, H₂ O₂ and H₂ O.

15. The method of claim 1, additionally comprising the step of alloying a conductive layer to said semiconductor crystal body.

16. The method of claim 14, wherein said etchant comprises H₂ SO₄, H₂ O₂ and H₂ O.

17. A method for cleaving a semiconductor crystal body, said semiconductor crystal body comprising a substrate having a plurality of semiconductor layers deposited epitaxially thereon, wherein at least one of said layers when appropriately biased generates electromagnetic radiation, and wherein said semiconductor crystal body has a first surface and an opposite second surface, comprising the steps of:

a) forming a plurality of parallel channels having sidewalls and a bottom therebetween across the first surface of the semiconductor crystal body;

b) making a plurality of scribes along a portion of a total length of the second surface opposite said channels and between the planes of said sidewalls thereof on the first surface; and

c) mechanically cleaving the semiconductor body along each plane defined by one of said channels of the first surface and said opposing scribe on the second surface.

18. The method of claim 17, wherein said channels are formed by sawing rectangularly shaped channels along said first surface of the semiconductor.

19. The method of claim 17, wherein said scribes on said second surface are centered with respect to said channels on said first surface.

20. The method of claim 17, wherein the semiconductor is cleaved by applying a mechanical force in alignment with said plane.