Silicon transistor device with silicon-germanium electron gas hetero structure channel
First Claim
1. A semiconductor heterostructure transistor, which comprises:
- a substrate body made from silicon substrate of a first conductivity type having a surface;
a source and a drain of a second conductivity type which are spaced apart from each other to define a channel region therebetween in said substrate body;
a gate electrode which is electrically insulated from the channel region and which is at least partially overlying the channel region; and
a silicon-germanium layer arranged below a silicon surface layer of the substrate body to partially extend into and coincide with said source and to partially extend into and coincide with said drain, said silicon-germanium layer having a lateral spatial extent which is limited to the coinciding regions and which essentially consists of a region between said source and said drain and which has first and second end portions that terminate within a corresponding one of said source and said drain.
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Accused Products
Abstract
A metal oxide semiconductor field effect transistor with heterostructure has a silicon substrate. Heavily-doped source and drain layers which are different in conductivity type from the substrate are spaced apart from each other in the surface portion of the substrate. A gate electrode of polycrystalline silicon is disposed above the substrate, and is electrically insulated from the substrate by a gate insulation layer made of thermal silicon oxide thin film. A silicon germanium layer is laterally provided in a preselected substrate surface section positioned between the source and drain layers. This layer partially overlaps the source and drain layers at both of its end portions, and is thus electrically in contact with these layers. The silicon germanium layer acts as a channel of the transistor.
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Citations
12 Claims
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1. A semiconductor heterostructure transistor, which comprises:
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a substrate body made from silicon substrate of a first conductivity type having a surface; a source and a drain of a second conductivity type which are spaced apart from each other to define a channel region therebetween in said substrate body; a gate electrode which is electrically insulated from the channel region and which is at least partially overlying the channel region; and a silicon-germanium layer arranged below a silicon surface layer of the substrate body to partially extend into and coincide with said source and to partially extend into and coincide with said drain, said silicon-germanium layer having a lateral spatial extent which is limited to the coinciding regions and which essentially consists of a region between said source and said drain and which has first and second end portions that terminate within a corresponding one of said source and said drain. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor heterostructure transistor, which comprises:
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a substrate body made from silicon of a first type conductivity having a surface; a source and a drain of a second type conductivity which are spaced apart from each other to define a channel region therebetween in said substrate body; a gate electrode which is electrically insulated from the channel region and which is at least partially overlying the channel region; and a dielectric film between said gate electrode and the substrate body surface; a silicon-germanium layer on the substrate body surface and having a lateral spatial extent which is limited to a region between said source and said drain, said silicon-germanium layer includes regions which partially extend into and coincide with said source and partially extend into and coincide with said drain, said silicon-germanium layer being in direct contact with said dielectric film and contacting said source and said drain, - View Dependent Claims (7, 8, 9)
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10. A bipolar heterostructure transistor, which comprises:
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a substrate body made from silicon and having a surface; a semiconductor collector layer of a first conductivity type in said substrate body; a semiconductor base region of a second conductivity type provided in the surface of said substrate body; a base layer below the surface of said substrate body, comprising a silicon-germanium layer having a lateral extent confined to between opposing portions of said base region, said lateral extent including regions partially extending into, coinciding with and ending in said semiconductive base region; and a semiconductive emitter layer of the first conductivity type which is adjacent to said base layer and disposed in the surface of said substrate body. - View Dependent Claims (11, 12)
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Specification