High isolation integrated switch circuit

• US 5,272,457 A
• Filed: 03/10/1992
• Issued: 12/21/1993
• Est. Priority Date: 03/10/1992
• Status: Expired due to Term

• Current Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Harris Corporation (L3Harris Technologies, Inc.)
• Inventors: Schappacher, Jerry, Rodriguez, Augusto E., Heckaman, Douglas
• Primary Examiner(s): GENSLER, PAUL L
• Application Number:
  US07/849,170
• Time in Patent Office: 651 Days
• Field of Search: 333/101, 333/103, 333/106, 333/161, 333/164, 333/262, 307/242, 307/571, 307/574, 307/304
• US Class Current: 333/262
• CPC Class Codes: H01P 1/15 by semiconductor devices

Abstract

A high isolation broadband switching circuit includes a plurality of switching elements coupled in series alternatingly with transmission line segments. Each switching element has a low or very high impedance between first and second points responsive to first and second values of a control voltage, respectively. In a first embodiment, the switching element includes a PIN diode having a cathode coupled to a first transmission line and an anode coupled to a second transmission line. In a second embodiment, the switching element includes a field effect transistor (FET) having a drain coupled to a first transmission line and a source coupled to a second transmission line. A first resistor is coupled between the drain and the source for DC continuity between the drain and the source, and a second resistor coupled between a gate of the FET and ground for DC continuity. A bias voltage source is coupled through a resistor to one of a source and a drain of one of the FETs. A bias voltage propagates through each transmission line and each first resistor, so DC continuity is provided. The bias voltage has a first value which causes the switching elements to have a low impedance to place the switching circuit in an ON state, and a second value which causes the switching elements to have a high impedance to place the circuit in a non-conductive state. The high impedance of the switching elements effectively opens the connections between the transmission lines.

Claims

1. A high frequency switch circuit element comprising:

a voltage controlled resistor in the form of a field effect transistor having a gate coupled to a reference voltage terminal, a source, and a drain;

an input terminal to which a high frequency signal is applied, said input terminal being coupled to one of the source and drain of said field effect transistor;

an output terminal from which said high frequency signal is derived, said output terminal being coupled to the other of the source and drain of said field effect transistor;

a control terminal to which a control signal is applied, coupled to said field effect transistor, for controlling the operation of said switch circuit element, said control signal having a first state which places said field effect transistor in a first, low impedance state between the source and drain thereof, so as to effectively provide a high frequency signal pathway between said source and drain and thereby between said input terminal and said output terminal, and wherein said control signal has a second state which places said field effect transistor in a second, high impedance state, so as to effectively isolate said source and drain and thereby said input terminal from said output terminal, and thereby prevent said high frequency signal pathway from being established between from said input terminal through said field effect transistor said output terminal;

a first resistor coupled between said input terminal and said output terminal, so as to effectively bridge the source and drain of said field effect transistor; and

further including

a second resistor coupled between said gate and said reference voltage terminal, and wherein said reference voltage terminal is coupled to ground.

2. A high frequency switch circuit element according to claim 1, further comprising a third resistor coupled between said control terminal and said one of the source and drain of said field effect transistor.

3. A high frequency switching device comprising:

a plurality of high frequency switch circuit elements having respective input and output terminals coupled in cascade between an input port and an output port, each high frequency switch circuit element being formed of a voltage controlled resistor in the form of a field effect transistor having a gate coupled to a reference voltage terminal, a source, and a drain, an input terminal to which a high frequency signal is applied, said input terminal being coupled to one of the source and drain of said field effect transistor, an output terminal from which said high frequency signal is derived, said output terminal being coupled to the other of the source and drain of said field effect transistor, and a first resistor coupled between said input terminal and said output terminal, so as to effectively bridge the source and drain of said field effect transistor; and

a control terminal, to which a control signal is applied, coupled to a field effect transistor of one of the cascaded high frequency switch circuit elements, for controlling the operation of said cascaded high frequency switch circuit elements, said control signal having a first state which places each field effect transistor in a first, low impedance state between the source and drain thereof, so as to effectively provide a high frequency signal pathway between the sources and drains thereof, and wherein said control signal has a second state which places said field effect transistors in a second, high impedance state, so as to effectively isolate the sources and drains thereof, and thereby prevent a high frequency signal pathway from being established from said input port to said output port.

4. A high frequency switching device according to claim 3, wherein each cascaded field effect transistor includes a second resistor coupled between its gate and said reference voltage terminal.

5. A high frequency switching device element according to claim 4, further comprising a third resistor coupled between said control terminal and said one of the source and drain of said one of said cascaded high frequency switch circuit elements.

6. A high isolation switch circuit module comprising:

an input port and an output port;

a plurality of generally linear transmission line segments of equal length disposed in parallel, spaced apart relationship with one another, each transmission line segment having first and second ends which are disposed adjacent to respective first and second ends of an adjacent transmission line segment, such that a line which is orthogonal to and bisects one of said plurality of transmission line segments also bisects the other transmission line segments of said plurality of transmission line segments, and wherein one end of a first of said transmission line segments is coupled to said input port and wherein one end of a second of said transmission line segments is coupled to said output port;

a plurality of controllable impedance switching elements, respective ones of which are coupled between alternate adjacent ends of adjacent ones of said segments, so as to form a serpentine pattern of transmission line segments of controllable impedance switching elements, and such that with each of said controllable impedance switching elements being in an effectively electrically open, high impedance state, each of said transmission line segments is effectively electrically isolated from every other transmission line segment and said output port is effectively electrically isolated from said input port, thereby providing an all-stop configuration, and such that with each of said controllable impedance switching elements being in an effectively electrically closed, low impedance state, said transmission line segments are effectively electrically connected in series, and said output port is effectively electrically coupled to said input port, thereby providing an all-pass configuration.

7. A high isolation switch circuit module according to claim 6, wherein each of said controllable impedance switching elements comprises a PIN diode having its anode and cathode coupled between adjacent ends of adjacent ones of said transmission line segments.

8. A high isolation switch circuit module according to claim 6, wherein each of said controllable impedance switching elements comprises a high frequency switch circuit element that includes a voltage controlled resistor in the form of a field effect transistor having a gate coupled to a reference voltage terminal, a source coupled to an end of one of said transmission line segments, and a drain coupled to an adjacent end of an adjacent one of said transmission line segments.

9. A high isolation switch circuit module according to claim 8, further including a first additional controllable impedance switching element in the form of a voltage controlled resistor comprised of a field effect transistor having a gate coupled to a reference voltage terminal, its source and drain coupled between said one end of said first of said transmission line segments and said input port, and a first resistor coupled between the source and drain of said first field effect transistor, and a second additional controllable impedance switching element in the form of a voltage controlled resistor comprised of a field effect transistor having a gate coupled to a reference voltage terminal, and its source and drain coupled between said one of said second of said transmission line segments and said output port, and a second resistor coupled between the source and drain of said second field effect transistor.

10. A high isolation switch circuit module according to claim 9, further including a control terminal to which a control signal is applied, coupled to each of said transmission line segments, for controlling the operation of said switch circuit module, said control signal having a first state which places the voltage controlled resistor field effect transistors in a first, low impedance state between the sources and drains thereof, so as to effectively provide a high frequency signal pathway through a series coupling of said plurality of transmission line segments, and wherein said control signal has a second state which places said voltage controlled resistor field effect transistors in a second, high impedance state, so as to effectively electrically isolate said transmission line segments from one another.

11. A high isolation switch circuit module according to claim 10, further including a plurality of resistors respectively ones of which bridge prescribed locations of adjacent transmission line segments and wherein said control terminal is coupled to a selected location of at least of one of said transmission line segments.

12. A high isolation switch circuit module according to claim 11, wherein said prescribed locations of adjacent transmission line segments are high frequency voltage null points.

13. A high isolation switch circuit module according to claim 11, wherein said prescribed locations of adjacent transmission line segments are midpoints thereof.

14. A high isolation switch circuit module according to claim 13, wherein said selected location is a midpoint of said at least of one of said transmission line segments.