Optical modulation and switching with enhanced third order nonlinearity multiple quantum well effects

• US 5,274,246 A
• Filed: 05/04/1992
• Issued: 12/28/1993
• Est. Priority Date: 05/04/1992
• Status: Expired due to Fees

• Current Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Original Assignee: United States Of America As Represented By The Secretary Of The Air Force
• Inventors: Hopkins, Frank K., Boyd, Joseph T., Jackson, Howard E.
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US07/878,272
• Time in Patent Office: 603 Days
• Field of Search: 257/21, 257/17, 257/85, 257/98, 257/20, 359/248, 359/254, 359/246, 359/247, 359/252, 385/14
• US Class Current: 257/17
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/017 Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
• CPC Class Codes: G02F 1/01791 Quantum boxes or quantum dots
• CPC Class Codes: G02F 1/3556 Semiconductor materials, e.g. quantum wells

Abstract

A multiple quantum well arrangement which achieves significantly improved third order optical nonlinearity in a semiconductor device by way of spatially periodic electrodes applied to the semiconductor device. The spatial period of the applied electrodes and the resulting exciton confinement dimension is improved over that of previous multiple quantum well structures and to the Bohr radius range of dimensions for the semicondcutor material by way of av

RIGHTS OF THE GOVERNMENT

The invention described herein may be manufactured and used by or for the Government of the United States for all governmental purposes without the payment of any royalty.

Claims

1. A multiple quantum well exciton confinement photonic apparatus of voltage determined large third order optical nonlinearity capability comprising the combination of:

a substrate member of selected semiconductor material composition;

a multiple quantum well modified layer of said semiconductor material formed over a portion of said substrate member;

a first layer of electrically insulating dielectric material formed over a portion of said multiple quantum well semiconductor material;

electrode array means including a plurality of electrode members disposed in spatial periodicity on said dielectric material adjacent said multiple quantum well semiconductor material layer and held at predetermined polarities and voltage amplitudes with respect to said substrate member for generating exciton confinement periodic regions and enhanced optical nonlinearity effects in said multiple quantum well semiconductor material;

said spatial periodicity being of a period substantially equal to a Bohr radius of said semiconductor material; and

means including optical input and output port members for communicating light signals to and from said multiple quantum well semiconductor layer.

2. The apparatus of claim 1 wherein said semiconductor material comprises layers of compound semiconductor alloys incorporating periodic table group III and IV elements.

3. The apparatus of claim 2 wherein said electrode members comprise regions of increased electrical conductivity with respect to said dielectric material and with respect to material disposed between said electrode members.

4. The apparatus of claim 3 wherein said electrode members comprise electrical potential controlling individual strip element means disposed across and electrically insulating dielectric material at uniform spatial periods up to an excitonic Bohr radius of said semiconductor material for distorting a conduction band and a valence band in said layer of multiple quantum well semiconductor material into complementary undulating hill and valley patterns having substantially said excitonic Bohr radius spatial period.

5. The apparatus of claim 4 wherein said electrode members are comprised of metal.

6. The apparatus of claim 4 wherein said electrode members are comprised of polycrystalline semiconductor material.

7. The apparatus of claim 1 wherein said electrode members are spaced at intervals of less than thirty microns.

8. The apparatus of claim 1 wherein said semiconductor material is gallium arsenide.

9. The apparatus of claim 1 wherein said electrode members are comprised of metal and further including a second layer of electrical insulating material disposed over said metallic electrode members and a layer of metal material disposed over an exposed surface portion of said second layer of electrical insulating material.

10. The apparatus of claim 9 wherein said second layer of electrical insulating material and said layer of metal material include undulating complementary surface topographies.

11. The apparatus of claim 1 wherein said electrode members comprise electrically insulating material of differing dielectric constants, and further including a layer of metal disposed over an exposed surface portion of said electrically insulating material of differing dielectric constant.

12. The apparatus of claim 1 wherein said electrode members comprise physically separated electrical insulating pseudo electrode members having differing dielectric constant from said first electrically insulating dielectric material and further including a layer of metal overlaying said pseudo electrode members and spaces intermediate said pseudo electrode members.

13. A method for providing confined exciton third order nonlinear optical effects in a semiconductor sample incident optical beam comprising the steps of:

communicating said optical beam as input signal to a selected one of a transmission mode and a reflection mode beam altering relationship with an optical waveguide received sample of multiple quantum well said semiconductor material;

generating within said semiconductor material sample an exciton confinement energy band relationship wherein exciton electrons are concentrated in valley reigons of an uppermost conduction band and exciton holes are concentrated in hill regions of a lowermost valence band;

said generating step including disposing said conduction band valley and valence band hill regions within said semiconductor material by applying a spatially periodic electric field generating voltage pattern across a surface region of said semiconductor material;

said spatially periodic electric field having a period length up to an excitonic Bohr radius of said semiconductor material; and

collecting from said semiconductor material a voltage controlled third order optical nonlinearity effect-altered beam output optical signal.

14. The method of claim 13 wherein said communicating, generating, and collecting steps comprise one-dimensional exciton confinement in said semiconductor sample and further including first additional steps comprising exciton confinement in a second physical dimension.

15. The method of claim 14 further including second additional steps comprising exciton confinement in a third physical dimension.

16. The method of claim 13 wherein said steps comprise beam amplitude modulation.

17. The method of claim 13 wherein said beam altering comprises beam on-and-off switching.

18. The method of claim 13 wherein said generating step includes energizing an array of semiconductor material surface-proximate electrode members with a predetermined pattern of electrode voltages.

19. The method of claim 18 wherein said generating step also includes disposing said electrodes at intervals equal to, or less than, said excitonic Bohr radius.

20. The method of claim 13 wherein said semiconductor sample includes one of an otherwise induced and an inherent therein third order nonlinear optical characteristic and wherein said communicating, generating, and collecting steps providing nonlinearity are supplementary to said otherwise induced and inherent third order nonlinearity.