Parallel circuit module including a diode and an IGBT

• US 5,274,541 A
• Filed: 12/20/1990
• Issued: 12/28/1993
• Est. Priority Date: 12/22/1989
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Suzuki, Yutaka, Mori, Mutsuhiro, Onda, Kenichi, Tanaka, Tomoyuki, Sakurai, Naoki, Kimura, Shin, Kurosu, Toshiki, Tokunaga, Norikazu, Matsuda, Yasuo, Yasuda, Yasumichi
• Primary Examiner(s): Skudy, R.
• Assistant Examiner(s): BERHANE, ADOLF D
• Application Number:
  US07/631,289
• Time in Patent Office: 1,104 Days
• Field of Search: 307/570, 307/571, 307/584, 363/132, 363/147, 363/56, 363/58
• US Class Current: 363/56.02
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/487 Neutral point clamped inverters
• CPC Class Codes: H03K 17/08148 in composite switches
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

In a module using a high-speed switching element such as an IGBT for a high-speed inverter, a matching condition is established between the switching characteristic of the IGBT and the recovery characteristic of the diode to be connected thereto in an anti-parallel fashion. As a result, the oscillating voltage appearing in the inverter circuit is suppressed to prevent erroneous operation of the inverter system.

Claims

1. A module having a semiconductor substrate for providing thereon an insulated gate bipolar transistor (IBGT) and a diode, said IGBT and said diode being electrically connected in an anti-parallel fashion in said module,

wherein assuming a value of di/dt attained, for a turn-on rise time of 0.5 μ

s of the said IGBT with a voltage equal to half a rated voltage thereof and at room temperature of said semiconductor substrate, is α

max, where i represents the current through said IGBT and α

max represents the maximum value of di/dt the recovery characteristic of said diode, in the parallel connection, is such that a peak-to-peak value (I_RP) of a recovery current thereof is less than 0.55 times the rated current (I_F) when said diode is recovered at the rated current I_F to the value of di/dt corresponding to α

max, and a recovery time thereof, in which the recovery current is attenuated from the peak-to-peak value I_RP to one tenth thereof, is at least 0.75 times a resonance period determined by the sum of parasitic capacitances associated with said IGBT and said diode and a wiring inductance existing in said module.