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Parallel circuit module including a diode and an IGBT

  • US 5,274,541 A
  • Filed: 12/20/1990
  • Issued: 12/28/1993
  • Est. Priority Date: 12/22/1989
  • Status: Expired due to Term
First Claim
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1. A module having a semiconductor substrate for providing thereon an insulated gate bipolar transistor (IBGT) and a diode, said IGBT and said diode being electrically connected in an anti-parallel fashion in said module,wherein assuming a value of di/dt attained, for a turn-on rise time of 0.5 μ

  • s of the said IGBT with a voltage equal to half a rated voltage thereof and at room temperature of said semiconductor substrate, is α

    max, where i represents the current through said IGBT and α

    max represents the maximum value of di/dt the recovery characteristic of said diode, in the parallel connection, is such that a peak-to-peak value (IRP) of a recovery current thereof is less than 0.55 times the rated current (IF) when said diode is recovered at the rated current IF to the value of di/dt corresponding to α

    max, and a recovery time thereof, in which the recovery current is attenuated from the peak-to-peak value IRP to one tenth thereof, is at least 0.75 times a resonance period determined by the sum of parasitic capacitances associated with said IGBT and said diode and a wiring inductance existing in said module.

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