Valve disks of silicon-infiltrated silicon carbide

• US 5,275,377 A
• Filed: 04/16/1993
• Issued: 01/04/1994
• Est. Priority Date: 04/17/1992
• Status: Expired due to Fees

• Current Assignee: Hoechst Ceramtec AG
• Original Assignee: Hoechst Ceramtec AG
• Inventors: Rubner, Klaus
• Primary Examiner(s): CHAMBERS, A MICHAEL
• Application Number:
  US08/046,814
• Time in Patent Office: 263 Days
• Field of Search: 251/368, 137/625.17, 137/625.41, 137/15
• US Class Current: 251/368
• CPC Class Codes: F16K 25/005 Particular materials for seats or closure elements
• CPC Class Codes: Y10T 137/0491 Valve or valve element assembling, disassembling, or replacing
• CPC Class Codes: Y10T 137/86823 Rotary valve

Abstract

A valve disk of silicon-infiltrated silicon carbide material for control elements for regulating liquid flows is suitable in particular for service-water mixer valves. The silicon carbide material contains 70 to 90% by weight of silicon carbide and 8 to 30% by weight of silicon with a content of most 0.2%, by weight of free carbon and contains at most 0.1% by volume of closed pores. The valve disk has a functional surface having the optical appearance in the form of isolated islands of bearing surfaces surrounded by a level lying lever with respect to the isolated islands, the functional surface having the following microtopographical characteristics over its entire region: R_a : 0.02 to 0.80 μm, preferably 0.15 to 0.40 μm; R_t : 0.50 to 6.00 μm,; R_z : 0.20 to 100 μm: flatness: 0.0002 to 0.01 mm; t_pi : 40 to 80% (at 0.3 μm cut depth); t_pa : 10 to 60% (at 0.3 μm cut depth). The invention also relates to a process for producing the valve disk.

Claims

1. A valve disk of silicon-infiltrated silicon carbide material for control elements for regulating liquid flows, in particular for service-water mixer valves, the silicon carbide material containing 70 to 90% by weight of silicon carbide and 8 to 30% by weight of silicon with a content of at most 0.2% by weight of free carbon and containing at most 0.1% by volume of closed pores, wherein the valve disk has a functional surface in which isolated islands of bearing surfaces are surrounded by a level lying lower with respect to the isolated islands, the functional surface having the following microtopographical characteristics over its entire region:

R_a 0.02 to 0.80 μ

m, preferably 0.15 to 0.40 μ

m

R_t 0.50 to 6.00 μ

m

R_z 0.20 to 1.00 μ

m

Flatness 0.0002 to 0.01 mm

t_pi 40 to 80% (at 0.3 μ

m cut depth)

t_pa 10 to 60% (at 0.3 μ

m cut depth).

2. The valve disk as claimed in claim 1, which comprises silicon-infiltrated silicon carbide having in its structure a SiC crystal structure with crystallite sizes in the range between 1 and 30 μ

m.

3. The valve disk as claimed in claim 1, which comprises silicon-infiltrated silicon carbide containing at least 8% by weight of free metallic silicon.

4. The valve disk as claimed in claim 1, which comprises silicon-infiltrated silicon carbide having a modulus of elasticity in the range of 300,000 to 400,000 N/mm².

5. The valve disk as claimed in claim 1, which comprises silicon-infiltrated silicon carbide with a hardness in the SiC matrix of between 20,000 and 30,000 N/mm², the hardness of the metallic silicon being between 10,000 and 15,000 N/mm².

6. The valve disk as claimed in claim 1, which comprises CSiSiC.

7. A process for manufacturing a valve disk as claimed in claim 1 in which silicon carbide is ground, dried, mixed with carbon and molding auxiliaries, shaped to form valve disks, subsequently carbonized and silicated at temperatures in the range of 1100°

to 1300°

C. in an inert gas atmosphere, wherein the silicated valve disk is ground and subsequently polished in two stages using aqueous suspensions of diamond grains, in the first stage polishing being carried out using a suspension of diamond grains having an average grain diameter of 3 to 6 μ

m, and in the second stage polishing being carried out with diamond grains having an average grain size of 10 to 20 μ

m.