Process for fabricating multi-discrete-phase fresnel lenses

• US 5,278,028 A
• Filed: 11/25/1991
• Issued: 01/11/1994
• Est. Priority Date: 12/26/1989
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Hadimioglu, Babur B., Lujan, Rene A.
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): Angebranndt, Martin J.
• Application Number:
  US07/796,742
• Time in Patent Office: 778 Days
• Field of Search: 430/320, 430/321, 430/323, 156/659.1, 156/643, 156/657, 359/565, 359/571, 359/575, 359/742
• US Class Current: 430/321
• CPC Class Codes: G02B 3/08 with discontinuous faces, e.g. Fresnel lens diffractive Fresnel lenses G02B5/1876
• CPC Class Codes: G02B 5/1876 Diffractive Fresnel lenses; Zone plates; Kinoforms G02B5/1842, G02B5/1847 take precedence; optical systems having diffractive correction means G02B27/0037; Fresnel lenses operating by refraction G02B3/08
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns

Abstract

A process is provided for fabricating multi-discrete-phase binary Fresnel acoustic and optical lenses through the use of standard microelectronic fabrication techniques, thereby enabling such lenses to be produced repeatedly and economically to exacting design specifications.

Claims

1. A method for fabricating a multi-discrete-phase Fresnel lens having a predetermined radial phase profile that is composed of a plurality of discrete phase steps, said method comprising the steps of

depositing a first reactive ion etch resistant overcoat of predetermined thickness on an essentially flat surface of a substrate;

depositing a layer of etchable material of predetermined thickness on said first overcoat;

depositing a second reactive ion etch resistant overcoat on said etchable material;

photolithographically patterning said second overcoat in conformity with said radial phase profile for selectively exposing radially bounded portions of said etchable material;

reactive ion etching the exposed portions of said etchable material to expose underlying portions of said first overcoat,

removing the exposed portions of said first overcoat and the patterned second overcoat for profiling said lens in accordance with at least a first and a second of said phase steps.

2. The method of claim 1 wherein

said etchable material is a silicon material.

3. The method of claim 1 wherein

said etchable material is amorphous silicon, and said first overcoat produces increased adhesion between said amorphous silicon and said substrate.

4. The method of claim 3 wherein

said first overcoat and said amorphous silicon layer are deposited to a combined thickness that determines a maximum amplitude phase step for said lens.

5. The method of claim 3 wherein

said first overcoat and said amorphous silicon layer are deposited to a combined thickness that exceeds a maximum amplitude phase step for said lens, and

said method further includes the step of grinding said amorphous silicon layer back until said combined thickness essentially equals said maximum amplitude phase step.

6. The method of claim 3 wherein

said first overcoat and said silicon material are deposited to a combined thickness that determines a maximum amplitude phase step for said lens.

7. The method of claim 3 wherein

said first overcoat and said silicon material are deposited to a combined thickness that exceeds a maximum amplitude phase step for said lens, and

said method further includes the step of grinding said silicon material back until said combined thickness essentially equals said maximum amplitude phase step.

8. The method of any one of claims 1-7 or wherein

said lens has n discrete phase steps and has a frequency response which is optimized at a predetermined frequency, and

a predetermined number, N, of binary weighted amplitude masks are etched into said lens, sequentially and in registered alignment if N is greater than 1, to an etch depth, d_i, which varies from mask-to-mask in accordance with an index value i which incrementally increases from the most heavily weighted to the least heavily weighted of said masks, such that the etch depth for each mask is given for said predetermined frequency by:

space="preserve" listing-type="equation">d.sub.i =2.sup.(1-i)·

π

radians

where i=1, 2, . . . , N.