Solar cell and method of making same

• US 5,279,682 A
• Filed: 12/22/1992
• Issued: 01/18/1994
• Est. Priority Date: 06/11/1991
• Status: Expired due to Fees

• Current Assignee: ASE Americas Incorporated
• Original Assignee: Mobil Solar Energy Corporation (Angewandte Solarenergie ASE)
• Inventors: Wald, Fritz, Murad, Jacob
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/994,763
• Time in Patent Office: 392 Days
• Field of Search: 136/256, 437/2-5, 437/180-181, 437/187-189, 437/195
• US Class Current: 136/256
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An improved solar cell of the type including a semiconductor substrate having a shallow p-n junction adjacent its front surface, a rear electrode affixed in adherent mechanical and electrical contact with the rear surface of the semiconductor substrate, and a front generally grid-shaped electrode including an array of narrow, elongate, parallel fingers and at least one bus bar extending at right angles to the fingers in electrical contact therewith affixed in mechanically adherent and low resistance electrical contact with the front surface of the semiconductor substrate. The improvement includes the removal of the bus bar portion of the front grid-shaped electrode from intimate mechanical and electrical contact with the front surface of the semiconductor substrate. The improvement increases the open circuit voltage and efficiency of the solar cell, and allows the bus bar portion of the grid shaped electrode to be formed of materials different from the finger portions of that electrode thereby providing cost advantages and design flexibility without detriment to solar cell efficiency. A method of making the improved solar cell also is disclosed.

Claims

1. A solar cell comprising:

a semiconductor substrate having a front surface, a rear surface, and a shallow p-n junction adjacent said front surface;

a first electrode affixed in mechanical and electrical contact with said rear surface;

an array of narrow, elongate, second electrodes affixed in mechanical and low resistance electrical contact with said front surface;

an anti-reflection coating overlying and bonded to said front surface in flanking relation to each of said second electrodes, said anti-reflection coating having a front surface facing away from said substrate; and

at least one third electrode formed from a paste or an epoxy resin composition that contains conductive metal particles, said third electrode being bonded to said front surface of said anti-reflection coating and extending across said array of second electrodes at an angle to each of said second electrodes, said third electrode being in direct electrical contact with each of said second electrodes and also being spaced from and out of contact with the front surface of said semiconductor substrate by portions of said anti-reflection coating.

2. The solar cell of claim 1 wherein said semiconductor substrate is formed of silicon and said anti-reflection coating is formed of silicon nitride.

3. The solar cell of claim 2 wherein said second electrodes comprise silver particles and a glass matrix.

4. The solar cell of claim 1 wherein said third electrode comprises particles of silver in an epoxy polymer.

5. A solar cell according to claim 1 wherein said third electrode particles of silver in a glass matrix.

6. A method of making a solar cell, comprising:

(a) providing a semiconductor substrate having a front surface, a rear surface, a shallow p-n junction adjacent said front surface, an anti-reflection coating overlying and bonded to said front surface, and a first electrode in mechanical and electrical contact with said rear surface;

(b) forming an array of narrow, elongate, and mutually spaced second electrodes on said front surface of said semiconductor substrate such that each of said second electrodes is in mechanically adherent and low resistance electrical contact with said front surface of said semiconductor substrate and is flanked by said anti-reflection coating; and

(c) affixing at least one elongate third electrode to said front surface of said anti-reflection coating and each of said second electrodes such that said at least one third electrode extends across said array of second electrodes and is displaced from said front surface of said semiconductor substrate by said anti-reflection coating, said third electrode being formed from a first paste or an epoxy resin that contains conductive metal particles.

7. The method of claim 6 wherein said step of forming said array of said second electrodes includes the steps of selectively coating said anti-reflection coating with a second paste or ink containing metallic particles and glass frit in the pattern of the desired array, and heating the semiconductor substrate at a temperature and for a time such that said second paste or ink penetrates said anti-reflection coating and forms an adherent mechanical and low resistance electrical contact with said front surface of said semiconductor substrate.

8. The method of claim 7 wherein said semiconductor substrate is silicon, said anti-reflection coating is silicon nitride, each of said second electrodes comprises a glass matrix and particles of silver dispersed in said glass matrix, and said at least one third electrode comprises particles of silver in a solid epoxy polymer composition.

9. The method of claim 7 wherein the metallic particles contained in said second paste or ink are silver.

10. The method of claim 9 wherein said at least one third electrode comprises particles of silver.

11. The method of claim 7 wherein said second paste or ink is applied to said anti-reflection coating by direct writing means, and said at least one third electrode is formed by coating said anti-reflection coating and said second electrode with a first silver paste or epoxy resin applied by a method selected from the group consisting of screen printing, pad printing, and direct writing.

12. A method according to claim 6 wherein said at least one third electrode is formed by applying a predetermined composition comprising conductive metal particles and an epoxy resin to said anti-reflection coating in intersecting and contacting relation with said second electrodes, and thereafter heating said predetermined composition so as to polymerize said epoxy resin.

13. A method according to claim 12 wherein said predetermined composition comprises particles of silver dispersed in said epoxy resin.

14. A method according to claim 13 wherein said heating step involves heating said predetermined composition to a temperature of about 150 degrees C.

15. A solar cell comprising:

a silicon semiconductor substrate having a front surface, a rear surface, and a shallow p-n junction adjacent said front surface;

an anti-reflection coating of silicon nitride on said front surface, said anti-reflection coating having a front surface facing away from said substrate;

a first aluminum-coating electrode affixed in mechanical and electrical contact with said rear surface;

an array of narrow, elongate, substantially parallel second electrodes extending through said anti-reflection coating and affixed in mechanical and low resistance electrical contact with said front surface of said substrate, said second electrodes comprising silver particles in a glass matrix; and

at least one third electrode overlying said front surface of said anti-reflection coating and extending across said array of second electrodes in spaced and non-contacting relation with said front surface of said substrate, said at least one third electrode comprising silver particles dispersed in an epoxy matrix and being bonded to said anti-reflection coating and said second electrodes.

16. A solar cell comprising:

a semiconductor substrate having a front surface, a rear surface, and a shallow p-n junction adjacent said front surface;

a first electrode affixed in mechanical and electrical contact with said rear surface;

an array of narrow, elongate, second electrodes affixed in mechanical and low resistance electrical contact with said front surface;

an anti-reflection coating overlying and bonded to said front surface in flanking relation to each of said second electrodes, said anti-reflection coating having a front surface facing away from said substrate; and

at least one third electrode comprising conductive metal particles in a solid epoxy polymer material, said third electrode being bonded to said front surface of said anti-reflection coating and extending across said array of second electrodes at an angle to each of said second electrodes, said third electrode being in direct electrical contact with each of said second electrodes and also being spaced from and out of contact with the front surface of said semiconductor substrate by portions of said anti-reflection coating.

17. A solar cell according to claim 16 wherein said semiconductor substrate is silicon.

18. A solar cell according to claim 17 wherein said anti-reflection coating is formed of silicon nitride.

19. The solar cell of claim 16 wherein said conductive metal particles are particles of silver.

20. A method of making a solar cell, comprising:

(a) providing a semiconductor substrate having a front surface, a rear surface, a shallow p-n junction adjacent said front surface, an anti-reflection coating overlying and bonded to said front surface, and a first electrode in mechanical and electrical contact with said rear surface;

(b) forming an array of narrow, elongate, and mutually spaced second electrodes on said front surface of said semiconductor substrate such that each of said second electrodes is in mechanically adherent and low resistance electrical contact with said front surface of said semiconductor substrate and is flanked by said anti-reflection coating; and

(c) affixing at least one elongate third electrode to said front surface of said anti-reflection coating and each of said second electrodes such that said at least one third electrode extends across said array of second electrodes and is displaced from said front surface of said semiconductor substrate by said anti-reflection coating, said third electrode being affixed to said anti-reflection coating by selectively coating said anti-reflection coating and portions of said array of second electrodes with an epoxy material containing conductive metal particles in the desired pattern, and thereafter curing the epoxy material.

21. The method of claim 20 wherein said epoxy material contains silver particles.