Integrated circuit device including means for facilitating connection of antenna lead wires to an integrated circuit die
First Claim
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1. An integrated circuit device comprising:
- a silicon substrate forming a die having an integrated signal processing circuit formed in a surface thereof and including a first set of contact pads;
an insulative layer covering the circuit carrying surface of said die and having apertures therein exposing said first set of contact pads, said insulative layer having a thickness in excess of 10,000 angstroms;
a plurality of second contact pads disposed over discrete surface areas of said insulative layer, each such area surrounding one of said apertures, and each such second contact pad contacting one of said first set of pads through a corresponding aperture, said second pads being of a relatively soft metal and having a thickness in excess of 20 microns, said second pads being substantially larger than the corresponding first contact pads; and
means forming an electromagnetic antenna having wire leads bonded to said second pads, the size and thickness of said second pads combining with the thickness of said insulative layer to protect said integrated circuit during the bonding of each said wire lead to one of said second pads.
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Abstract
A method and apparatus for facilitating interconnection of lead wires to an integrated circuit including the provision of an additional protective layer of insulation to the top of an integrated circuit chip or die and the provision of enlarged plated electrodes to the surface of the additional insulation to form enhanced bonding pads, such pads being electrically connected through the protective layers to the normal bonding pads of the integrated circuit device. The enhanced bonding pads are made of a soft conductive metal such that external wires to be attached thereto can be bonded to the pads using a thermal compression bonding technique.
105 Citations
12 Claims
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1. An integrated circuit device comprising:
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a silicon substrate forming a die having an integrated signal processing circuit formed in a surface thereof and including a first set of contact pads; an insulative layer covering the circuit carrying surface of said die and having apertures therein exposing said first set of contact pads, said insulative layer having a thickness in excess of 10,000 angstroms; a plurality of second contact pads disposed over discrete surface areas of said insulative layer, each such area surrounding one of said apertures, and each such second contact pad contacting one of said first set of pads through a corresponding aperture, said second pads being of a relatively soft metal and having a thickness in excess of 20 microns, said second pads being substantially larger than the corresponding first contact pads; and means forming an electromagnetic antenna having wire leads bonded to said second pads, the size and thickness of said second pads combining with the thickness of said insulative layer to protect said integrated circuit during the bonding of each said wire lead to one of said second pads. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A miniature integrated circuit transponder device comprising:
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a semiconductor substrate having an integrated signal processing circuit formed thereon, said integrated circuit including a plurality of discrete contact pads for facilitating electrical interconnection thereto; an electrically insulative layer covering said integrated circuit and having apertures formed therein exposing said contact pads, said insulative layer having a thickness in excess of 10,000 angstroms; a plurality of bonding pads disposed over said insulative layer, with each said bonding pad extending through one of said apertures to make electrical contact with one of said contact pads, each said bonding pad being of a relatively soft metal having a thickness of at least 20 microns and having a surface area overlying a portion of said insulative layer substantially larger than the area of its corresponding aperture; and electromagnetic antenna means having lead wires bonded to corresponding ones of said bonding pads, the size and thickness of said bonding pads and said insulative layer being sufficient to protect said substrate and said integrated circuit during the bonding of said lead wires to said bonding pads. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification