Power MOSFET safe operating area current limiting device

• US 5,282,107 A
• Filed: 09/01/1992
• Issued: 01/25/1994
• Est. Priority Date: 09/01/1992
• Status: Expired due to Term

• Current Assignee: Power Integrations Incorporated
• Original Assignee: Power Integrations Incorporated
• Inventors: Balakrishnan, Balu
• Primary Examiner(s): DeBoer, Todd
• Application Number:
  US07/938,705
• Time in Patent Office: 511 Days
• Field of Search: 361/18, 361/91, 361/86, 323/274, 323/273, 363/56
• US Class Current: 361/18
• CPC Class Codes: H02M 3/335 using semiconductor devices only
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches

Abstract

An embodiment of the present invention is a switching power supply that includes a full-wave bridge rectifier to rectify incoming AC line voltage, a transformer having a primary winding and two secondary windings and a switched mode power supply chip that includes an integrated high voltage power MOSFET with a low voltage tap in the drift region. The MOSFET controls power switching of the primary winding of the transformer and has a high voltage present during initial power-up. This high voltage is dropped across the JFET part of the MOSFET and supplies a safe operating area protection circuit with a low voltage signal that will shut-off the MOSFET if the current passing through the MOSFET produces a voltage drop at the tap that exceeds a predetermined maximum.

Claims

1. A switched mode power supply chip, comprising:

power switching means for switching a primary winding current of a switched mode power supply transformer on and off, the power switching means comprising a first transistor for limiting the voltage applied to a drain of a second transistor;

a low voltage tap connected to said drain of said second transistor such that a sense voltage proportional to a current passing through said first and second transistors is output from the low voltage tap when said first and second transistors are turned on; and

comparator means for disabling the power switching means whenever said sense voltage exceeds a predetermined maximum wherein the power switching means is operated in its safe operating area.

2. The chip of claim 1, wherein:

the power switching means is a MOSFET device and said first transistor is a JFET with a grounded gate and said second transistor is an IGFET with a grounded source.

3. The chip of claim 1, wherein:

the comparator means comprises an inverter with an input switching threshold of approximately 2.5 volts and a flip-flop that is reset by said inverter and that drives a gate of said second transistor.

4. The chip of claim 1, wherein:

the power switching means is a MOSFET device and said first transistor is a JFET with a grounded gate and said second transistor is an IGFET with a grounded source; and

the comparator means comprises an inverter with an input switching threshold of approximately 2.5 volts and a flip-flop that is reset by said inverter and that drives a gate of said IGFET.

5. An integrated circuit (IC) with safe operating area protection, the IC comprising:

power switching means for switching a high voltage output current connected to the IC on and off, the power switching means including a first transistor for limiting a voltage applied to a drain of a second transistor;

a low voltage tap connected to said drain of said second transistor such that a sense voltage proportional to a current passing through said first and second transistors is output from the low voltage tap when said first and second transistors are turned on; and

comparator means for disabling the power switching means whenever said sense voltage exceeds a predetermined maximum wherein the power switching means is operated in its safe operating area.