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Transistor antifuse for a programmable ROM

  • US 5,282,158 A
  • Filed: 08/21/1992
  • Issued: 01/25/1994
  • Est. Priority Date: 08/21/1992
  • Status: Expired due to Term
First Claim
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1. A programmable read-only memory (PROM) chip having pairs of MOSFET devices comprising:

  • (a) a gate oxide formed over substrate;

    (b) a pair of gates formed over the gate oxide;

    (c) a drain diffusion formed between the gates;

    (d) a pair of source diffusions formed on an outside area of the gates;

    (e) a source line formed over the pair of source diffusions;

    (f) a trench formed between the pair of gates separating the drain diffusion into a first and second drain diffusion;

    (g) an insulating oxide grown within the trench;

    (h) an antifuse material deposited over the pair of MOSFET devices and having electrical contact with the first and second diffusions; and

    (i) a bit line deposited over the trench and drain diffusions, wherein applying a voltage on the bit line and source line shorts the antifuse material thereby creating a functional MOSFET, and not applying a voltage on the bit line and source line provides an open circuit.

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