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IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions

  • US 5,283,202 A
  • Filed: 09/15/1992
  • Issued: 02/01/1994
  • Est. Priority Date: 03/21/1986
  • Status: Expired due to Term
First Claim
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1. In a fabrication process for making a semiconductor power device having at least one PN junction, an improved minority carrier lifetime control process comprising:

  • selecting a transition metal having a deep level in silicon suitable for recombination;

    determining a maximum dose of the selected transition metal that can be fully dissolved into the substrate at a temperature in a range between a eutectic temperature of the substrate and an annealing temperature of the substrate;

    determining and depositing a dose of the transition metal not exceeding the maximum dose sufficient to effect lifetime control without substantially increasing leakage current of the device; and

    diffusing the metal atoms throughout the substrate at a temperature within said range, including;

    diffusing a first portion of the dose throughout the substrate; and

    diffusing a second portion of the dose in a gradient band near a selected surface of the substrate.

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