Graphite chuck having a hydrogen impervious outer coating layer

• US 5,284,640 A
• Filed: 09/17/1992
• Issued: 02/08/1994
• Est. Priority Date: 12/26/1989
• Status: Expired due to Term

• Current Assignee: Advanced Silicon Materials LLC (REC Silicon ASA)
• Original Assignee: Advanced Silicon Materials, Inc.
• Inventors: Winterton, Lyle C., Jernegan, Michael F.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): HORTON, KENNETH
• Application Number:
  US07/947,882
• Time in Patent Office: 509 Days
• Field of Search: 423/348, 423/349
• US Class Current: 423/349
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/4581 characterised by material of construction or surface finish of the means for supporting the substrate
• CPC Class Codes: C30B 13/00 Single-crystal growth by zone-melting; Refining by zone-melting C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00
• CPC Class Codes: C30B 15/00 Single-crystal growth by pulling from a melt, e.g. Czochralski method under a protective fluid C30B27/00
• CPC Class Codes: C30B 29/06 Silicon

Abstract

The present invention is directed to a method for making substantially carbon-free polycrystalline silicon which comprises pyrolyzing a gaseous silicon compound on a heated starter filament mounted on a graphite chuck, said heated starter filament being maintained at a temperature sufficient to effect decomposition of the gaseous silicon compound to form polycrystalline silicon which is deposited thereon and by-product hydrogen, wherein the said graphite chuck is provided with a hydrogen impervious outer coating layer to prevent the by-product hydrogen from reacting with the graphite and form methane which decomposes as carbon on the deposited polycrystalline silicon.

Claims

1. A method for making substantially carbon-free polycrystalline silicon which comprises pyrolyzing a gaseous silicon compound on a heated starter filament that consists essentially of silicon, tungsten, or tantalum, and that is mounted on a graphite chuck, said heated starter filament being maintained at a temperature sufficient to effect decomposition of the gaseous silicon compound to form polycrystalline silicon which is deposited thereon and by-product hydrogen, wherein the said graphite chuck is provided with a hydrogen impervious outer coating layer to prevent the by-product hydrogen from reacting with the graphite to form methane which decomposes as carbon on the deposited polycrystalline silicon.

2. The method of claim 1, wherein the gaseous silicon compound is silane.

3. The method of claim 1, wherein the gaseous silicon compound is trichlorosilane.

4. The method of claim 1, wherein the hydrogen impervious outer coating layer is continuous.

5. The method of claim 1, wherein the hydrogen impervious outer coating layer has a thickness of greater than about 0.1 mil.

6. The method of claim 1, wherein the hydrogen impervious outer coating layer has a thickness of greater than about 1 mil

7. The method of claim 1, wherein the hydrogen impervious outer coating layer has a thickness in the range of from about 0.5 to 3 mils.

8. The method of claim 1, wherein the hydrogen impervious outer coating layer is selected from the group consisting of silicon carbide, polycrystalline silicon, tantalum, titanium, tungsten, silicon nitride, silicon oxide, molybdenum and combinations thereof.

9. The method of claim 1, wherein the graphite chuck is provided with a lower channel and is mounted on an electrode which provides current to heat the starter filament.

10. The method of claim 9, wherein the hydrogen impervious outer coating layer is silicon carbide and is not present on the surfaces of the chuck which are in contact with the electrode.

11. The method of claim 1, wherein the hydrogen impervious outer layer is silicon carbide.

12. The method of claim 1, wherein the hydrogen impervious outer layer is polycrystalline silicon.

13. The method of claim 1, wherein the hydrogen impervious outer coating layer is electrically conductive and covers the entire surface of the chuck.

14. A method for making substantially carbon-free polycrystalline silicon by pyrolyzing a gaseous silicon compound on a heated starter filament mounted inside a reactor vessel on an electrode which supplies current to heat the starter filament, the heated starter filament being maintained at a temperature sufficient to effect decomposition of the gaseous silicon compound to form polycrystalline silicon which is deposited thereon and by-product hydrogen, the method comprising:

providing a graphite chuck having a hydrogen impervious outer coating layer;

mounting the coated chuck onto an electrode of a polycrystalline silicon reactor vessel such that the chuck supports a starter filament that consists essentially of silicon, tungsten, or tantalum, and

passing electrical current through the electrode, chuck and starter filament in the presence of a gaseous silicon compound, the hydrogen impervious coating preventing by-product hydrogen inside the vessel from reacting with the graphite to form methane which would decompose as carbon on polycrystalline silicon being deposited on the starter filament.

15. The method of claim 14, wherein the gaseous silicon compound is silane.

16. The method of claim 14, wherein the gaseous silicon compound is trichlorosilane.

17. The method of claim 14, wherein the hydrogen impervious outer coating layer is continuous.

18. The method of claim 14, wherein the hydrogen impervious outer coating comprises a material selected from the group consisting of silicon carbide, polycrystalline silicon, tantalum, titanium, tungsten, silicon nitride, silicon oxide, molybdenum, and combinations thereof.

19. The method of claim 14, wherein the hydrogen impervious outer coating layer is electrically conductive and covers the entire surface of the chuck.

20. The method of claim 14, wherein the hydrogen impervious outer coating layer is silicon carbide and is not present on the surfaces of the chuck which are in contact with the electrode.

21. The method of claim 14, wherein the hydrogen impervious outer layer is silicon carbide.

22. The method of claim 14, wherein the hydrogen impervious outer layer is polycrystalline silicon.