Full-wafer processing of laser diodes with cleaved facets

• US 5,284,792 A
• Filed: 06/11/1993
• Issued: 02/08/1994
• Est. Priority Date: 06/09/1992
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Rubloff, Gary W., Oosenbrug, Albertus, Forster, Theodor, Harder, Christoph
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Picardat, Kevin M.
• Application Number:
  US08/074,530
• Time in Patent Office: 242 Days
• Field of Search: 437/129, 437/130, 437/126, 437/226, 148/DIG. 28
• US Class Current: 438/29
• CPC Class Codes: H01S 5/0201 Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: Y10S 148/028 Dicing

Abstract

A method for full-wafer processing of laser diodes with cleaved facets combining the advantages of full-wafer processing, to date known from processing lasers with etched facets, with the advantages of cleaved facets. The steps being: defining the position of the facets to be cleaved by scribing marks into the top surface of a laser structure comprising epitaxially grown layers, these scribed marks being perpendicular to the optical axis of the lasers to be made, the scribed marks being parallel, their distance (l_c) defining the length of the laser cavities and the distance (l_b) between the facets of neighboring laser diodes; and covering the uppermost portion with an etch mask pattern which provides for etch windows between the scribed marks defining the position of facets of neighboring lasers; and etching trenches into an upper portion of the structure defined by the etch windows; and partly underetching the upper portion during a second etch step such that the laser facets can be defined by cleaving the upper portion along the scribed marks without cleaving the whole laser structure; and ultrasonically or mechanically cleaving the upper portions being underetched along the scribed marks; and separating the laser diodes by cleaving them between neighboring lasers.

Claims

1. A method for processing a plurality of semiconductor laser diodes with cleaved facets, starting with a laser structure comprising a plurality of layers formed on top of a laser substrate, comprising the steps of:

a) defining the position of the facets to be cleaved by scribing a set of parallel scribed marks into the top surface of said plurality of layers, said scribed marks being substantially perpendicular to a predetermined optical axis of the lasers to be made, and having a predetermined laser length distance defining the length of a plurality of laser cavities of said laser diodes and a predetermined separation distance between the facets of neighboring laser diodes;

b) covering the uppermost portion of said layers with a protective etch mask that covers each laser diode to be made, extends over said scribed marks defining said laser length of each laser and includes a plurality of etch windows between said scribed marks defining the position of facets of neighboring lasers;

c) etching trenches at least into an upper portion of said laser structure through said plurality of etch windows, thereby leaving a lower portion including said substrate;

d) partly underetching said upper portion during a second etch step of said lower portion through said plurality of etch windows, whereby an undercut portion of a plurality of etch apertures extends under said upper portion past said scribed marks, so that said laser facets can be defined by cleaving said upper portion along said scribed marks without cleaving the whole laser structure;

e) cleaving said underetched upper portions along said scribed marks, thereby defining laser facets perpendicular to said layers and to said optical axis; and

f) separating said plurality of laser diodes by cleaving said lower portion between neighboring lasers.

2. The method of claim 1, in which said step of etching said trenches is continued through said laser structure exposing said laser substrate at the bottom of said trenches and said step of undercutting is performed in said laser substrate.

3. The method of claim 2, wherein a partially-cut pattern is cut at the backside of said laser substrate, said pattern consisting of perpendicular cuts defining rectangular sections, one side thereof being longer than said laser length distance and being parallel to the optic axis of the laser diodes, another side being perpendicular to said one side such that said substrate of said laser structure or the carrier substrate can be cleaved along these cuts to separate the individual laser diodes.

4. The method of claim 3, comprising a step of depositing at least one of a passivation, anti-reflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.

5. The method of claim 2, comprising a step of depositing at least one of a passivation, anti-reflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.

6. The method of claim 2, wherein the layers of said laser structure are separated from said laser substrate by a thin intermediate etch-stop layer, such that the etchant used for underetching does not attack said upper layers.

7. The method of claim 6, comprising a step of depositing at least one of a passivation, anti-reflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.

8. The method of claim 7, wherein an etch-protection layer is deposited on the side walls of said trenches prior to underetching.

9. The method of claim 2, wherein the layers of said laser structure are separated from said laser substrate by a thin intermediate etch-stop layer, such that the etchant used for underetching does not attack said upper layers.

10. The method of claim 9, wherein an etch-protection layer is deposited on the side walls of said trenches prior to underetching.

11. The method of claim 10, comprising a step of depositing at least one of a passivation, antireflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.

12. The method of claim 1, wherein said laser structure is mounted on a carrier substrate differing from said laser substrate and in which said step of etching said trenches is continued through said laser structure exposing said carrier substrate at the bottom of said trenches and said step of undercutting is performed in said carrier substrate.

13. The method of claim 12, wherein a partially-cut pattern is cut at the backside of said laser substrate, said pattern consisting of perpendicular cuts defining rectangular sections, one side thereof being longer than said laser length distance and being parallel to the optic axis of the laser diodes, another side being perpendicular to the said one side such that said substrate of said laser structure or the carrier substrate can be cleaved along these cuts to separate the individual laser diodes.

14. The method of claim 13, comprising a step of depositing at least one of a passivation, antireflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.

15. The method of claim 12, comprising a step of depositing at least one of a passivation, antireflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.

16. The method of claim 12, wherein the layers of said laser structure are separated from said laser substrate by a thin intermediate etch-stop layer, such that the etchant used for underetching does not attack said upper layers.

17. The method of claim 16, comprising a step of depositing at least one of a passivation, antireflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.

18. The method of claim 17, wherein an etch-protection layer is deposited on the side walls of said trenches prior to underetching.

19. The method of claim 12, wherein the layers of said laser structure are separated from said laser substrate by a thin intermediate etch-stop layer, such that the etchant used for underetching does not attack said upper layers.

20. The method of claim 19, wherein an etch-protection layer is deposited on the side walls of said trenches prior to underetching.

21. The method of claim 20, comprising a step of depositing at least one of a passivation, antireflection, or protection layer on said cleaved facets before said step of separating said laser diodes and after said step of cleaving said upper portions.