Semiconductor sensor of electrostatic capacitance type
First Claim
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1. A semiconductor sensor comprising:
- a substrate having a surface that is one of conductive and semiconductive and an insulative surface;
a pair of conductive members provided on said conductive/semiconductive surface; and
a semiconductor functional element for sensing an electrostatic capacitance between said pair of conductive members, and being electrically connected with at least one of said conductive members,wherein at least one of said conductive members can be deformed and the electrostatic capacitance between said conductive members varies in accordance with the deformation of said at least one conductive member, andwherein said conductive members and said semiconductor functional element are integrally formed on said substrate.
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Abstract
A semiconductor sensor has a semiconductor substrate including both of a conductive or semiconductor surface and an insulative surface and a pair of conductive members provided on said conductive or semiconductor surface of the substrate. There is constructed a sensor section in which at least one of the pair of conductive members can be deformed and an electrostatic capacitance between the pair of conductive members is variable. The semiconductor substrate has a functional element which is electrically connected to the sensor section.
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Citations
11 Claims
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1. A semiconductor sensor comprising:
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a substrate having a surface that is one of conductive and semiconductive and an insulative surface; a pair of conductive members provided on said conductive/semiconductive surface; and a semiconductor functional element for sensing an electrostatic capacitance between said pair of conductive members, and being electrically connected with at least one of said conductive members, wherein at least one of said conductive members can be deformed and the electrostatic capacitance between said conductive members varies in accordance with the deformation of said at least one conductive member, and wherein said conductive members and said semiconductor functional element are integrally formed on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsHirai, Yutaka
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Primary Examiner(s)MINTEL, WILLIAM A
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Application NumberUS07/838,891Time in Patent Office718 DaysField of Search357/25, 357/26, 357/68, 73/718, 73/724, 73/720, 73/726, 73/777, 73/760, 73/768, 280/735, 361/283, 361/280, 257/415, 257/417, 257/418, 257/419, 257/420US Class Current257/417CPC Class CodesH10N 39/00 Integrated devices, or asse...
