Single wafer megasonic semiconductor wafer processing system

• US 5,286,657 A
• Filed: 12/18/1991
• Issued: 02/15/1994
• Est. Priority Date: 10/16/1990
• Status: Expired due to Term

• Current Assignee: Akrion Incorporated
• Original Assignee: Verteq, Inc. (Akrion Incorporated)
• Inventors: Bran, Mario E.
• Primary Examiner(s): Kunemund, Robert
• Assistant Examiner(s): OJAN, OURMAZD
• Application Number:
  US07/809,799
• Time in Patent Office: 790 Days
• Field of Search: 134/1, 134/2, 134/3, 134/184, 134/902, 437/9, 437/10, 437/946
• US Class Current: 134/1.3
• CPC Class Codes: B08B 3/12 by sonic or ultrasonic vibrations washing or rinsing machines for crockery or tableware using sonic or ultrasonic waves A47L15/13; of natural teeth, of prostheses using ultrasonic techniques similar to those used for natural teeth A61C17/20; application of ultrasonic vibrations to chemical, physical or physico-chemical processes in general B01J19/10
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: Y10S 134/902 Semiconductor wafer
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step

Abstract

A semiconductor wafer processing system utilizing a specially constructed wet processing chamber for a single wafer and a megasonic, or high frequency, energy dispensing system. The construction of the container causes megasonic energy to become intensified near the surface of the wafer, thereby providing more cleaning power, and resulting cleaning. The megasonic device may be mounted on a bottom wall dump valve. Also, the energy output may be used to rotate a wafer.

Claims

1. A method of cleaning a semiconductor wafer or the like, comprising:

positioning the wafer in a container having a plurality of upstanding walls with upper portions defining a thin, flat, vertically oriented chamber for receiving the wafer, said chamber having a generally rectangular cross section defined by two side walls having flat, generally vertically oriented surfaces closely spaced from each other, said side walls being joined by two edge walls which are spaced from each other a distance slightly greater than the diameter of the largest wafer to be processed in the container, said walls extending to a open upper end for receiving and permitting withdrawal of the wafer from said container;

supporting said wafer so that two large, flat sides of the wafer extend vertically, positioned between but spaced from the chamber vertical side walls, said supporting step including supporting the wafer at a sufficiently low level that the upper edge of the wafer is located below the upper edges of said chamber walls;

introducing cleaning liquid into the chamber; and

directing megasonic energy into the chamber to agitate the liquid adjacent the flat sides of the wafer so as to loosen particles on the wafer, said energy being directed upwardly in a pattern greater in area than that defined by said upper portions of said walls, said side walls having lower portions spaced from each other in an amount considerably greater than the spacing between the side wall upper portions and including side wall portions which taper inwardly from the widely spaced lower side wall portions to said side wall upper portions whereby the portion of said energy being directed at said tapered wall portions is deflected and guided upwardly and inwardly to increase the agitation of said liquid adjacent said wafer.

2. The method of claim 1 including opening a dump valve in a lower wall of the container to quickly dump the liquid from the container and simultaneously lowering the device producing the megasonic energy, which is mounted on a movable portion of said valve.

3. The method of claim 1, including rotating said wafer on said supports utilizing a driver powered by an upward flow of liquid caused by said megasonic energy.