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Method of manufacturing a semiconductor device having buried elements with electrical characteristic

  • US 5,286,670 A
  • Filed: 05/08/1992
  • Issued: 02/15/1994
  • Est. Priority Date: 05/08/1991
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a semiconductor device having buried elements with electrical characteristic in a SOI substrate comprising the steps of:

  • (a) forming a first isolating insulator layer at a seed wafer by using an isolation mask, depositing a second isolating insulator layer overlying the first isolating insulator layer and the seed wafer, and defining contact holes by using a contact mask to form contacts on the seed wafer;

    (b) depositing a first polysilicon layer on the second isolating insulator layer and the contacts and doping an impurity into the first polysilicon layer;

    (c) patterning the first polysilicon layer to define an electrical element, depositing an insulating layer around the electrical element, and forming a second polysilicon layer overlying the second isolating insulator layer and the insulating layer;

    (d) doping an impurity into the second polysilicon layer for connecting with a handling wafer, and polishing the second polysilicon layer thus doped to form a mirror surface;

    (e) depositing an insulating layer for connection on the handling wafer, and performing a thermal process to bond the handling wafer and the mirror surface through the insulating layer for connection; and

    (f) polishing the seed wafer until the first isolating insulator layer as a polishing stopper is exposed, to form the SOI substrate having an active region where a device is formed.

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