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Fusion bonding technique for use in fabricating semiconductor devices

  • US 5,286,671 A
  • Filed: 05/07/1993
  • Issued: 02/15/1994
  • Est. Priority Date: 05/07/1993
  • Status: Expired due to Term
First Claim
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1. A method of bonding a first silicon wafer to a second silicon wafer comprising the steps of:

  • diffusing a high conductivity pattern into a surface of a first semiconductor wafer;

    etching a portion of said surface to raise at least a portion of said pattern;

    providing a second semiconductor wafer having an insulating layer of a silicon compound disposed thereon;

    contacting the surface of said pattern to said insulating layer; and

    bonding said first and second semiconductor wafers at an elevated temperature.

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