Wafer cleaning method and apparatus therefore

• US 5,288,333 A
• Filed: 07/29/1992
• Issued: 02/22/1994
• Est. Priority Date: 05/06/1989
• Status: Expired due to Term

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: Tanaka, Masato, Hirai, Nobuyuki, Nishizawa, Hisao, Shinbara, Kaoru, Yoshioka, Hitoshi
• Primary Examiner(s): Brunsman, David
• Assistant Examiner(s): Chaudhry, Saeed T.
• Application Number:
  US07/921,565
• Time in Patent Office: 573 Days
• Field of Search: 134/11, 134/12, 134/26, 134/30, 134/31, 134/37, 34/73, 34/78
• US Class Current: 134/31
• CPC Class Codes: B08B 7/0092 by cooling
• CPC Class Codes: H01L 21/02049 with gaseous HF
• CPC Class Codes: H01L 21/67023 for general liquid treatment, e.g. etching followed by cleaning

Abstract

A wafer cleaning method and apparatus in which a cleaning solution is caused to evaporate at a temperature below its boiling point, and cleaning vapor thus produced is applied at a temperature above its dew point to a wafer such as a semiconductor wafer. The wafer is cleaned without formation of colloidal silica in the absence of aerosol, or etched uniformly free of impurities. The wafer cleaning apparatus comprises a cleaning solution storage, a vapor generating section, a wafer supporting position of a wafer supporting device and a vapor supply section. These components are arranged in a housing to overlap one another in plan view and to lie vertically close to one another. The apparatus has a compact overall construction with simplified seals for preventing leakage of the cleaning vapor.

Claims

1. A method of cleaning a wafer by supplying cleaning vapor to the wafer, comprising the steps of:

causing a cleaning solution to evaporate at a temperature below its boiling point to produce said cleaning vapor; and

supplying said cleaning vapor to said wafer to clean said wafer at a temperature above a dew point thereof so as to reduce formation of an aerosol as a result of condensation of said cleaning vapor.

2. A method as claimed in claim 1, wherein said wafer after being cleaned is transferred to a wet cleaning chamber for supplying a further cleaning solution to said wafer.

3. A method as claimed in claim 1, wherein the cleaning vapor temperature is adjusted to a temperature above the dew point thereof.

4. A method as claimed in claim 1, wherein the cleaning solution comprises at least one member of the group consisting of H₂ SO₄, HNO₃, hydrogen halide, ammonia and choline.

5. A method as claimed in claim 1, wherein the cleaning solution comprises hydrogen fluoride.

6. A method of cleaning a wafer in a wafer cleaning apparatus, comprising the steps of:

supporting the wafer on a wafer supporting device;

storing a cleaning solution in a cleaning solution container;

evaporating said cleaning solution in a vapor generating section above said cleaning solution container at a temperature below a boiling point thereof;

supplying cleaning vapor in a vapor supply section to said wafer supported by said wafer supporting device at a temperature above a dew point thereof; and

arranging said cleaning solution container, said vapor generating section, a wafer supporting position of said wafer supporting device, and said vapor supply section in said apparatus to overlap one another in plan view and to lie vertically close to one another.

7. A method as claimed in claim 6, wherein the cleaning vapor temperature is adjusted to a temperature above the dew point thereof.

8. A method as claimed in claim 6, wherein the cleaning solution comprises at least one member of the group consisting of H₂ SO₄, HNO₃, hydrogen halide, ammonia and choline.

9. A method as claimed in claim 6, wherein the cleaning solution comprises hydrogen fluoride.

10. A method of cleaning a wafer in a wafer cleaning apparatus, comprising the steps of:

supporting the wafer at a prescribed level in said apparatus;

storing a cleaning solution in said apparatus;

evaporating said cleaning solution in a vapor generating section above said stored cleaning solution at a temperature below a boiling point thereof, to form a cleaning vapor; and

adjusting said cleaning vapor to a temperature above a dew point thereof so as to reduce formation of an aerosol as a result of condensation of said cleaning vapor and supplying said cleaning vapor to said wafer in a vapor supply section;

said vapor generating section, said stored cleaning solution, said vapor supply section, and said prescribed level of said wafer being so provided in said apparatus as to overlap one another in plan view and to be positioned vertically adjacent to one another in that order.

11. A method as claimed in claim 10, wherein the cleaning solution comprises at least one member of the group consisting of H₂ SO₄, HNO₃, hydrogen halide, ammonia and choline.

12. A method as claimed in claim 10, wherein the cleaning solution comprises hydrogen fluoride.