Prenucleation process for simox device fabrication

• US 5,288,650 A
• Filed: 10/09/1992
• Issued: 02/22/1994
• Est. Priority Date: 01/25/1991
• Status: Expired due to Term

• Current Assignee: IBIS Technology Corporation
• Original Assignee: IBIS Technology Corporation
• Inventors: Sandow, Peter M.
• Primary Examiner(s): Fourson, George
• Application Number:
  US07/960,193
• Time in Patent Office: 501 Days
• Field of Search: 437/24, 437/247, 437/25, 437/26, 437/27, 437/62, 148/DIG. 3, 148/DIG. 76, 148/DIG. 83, 148/DIG. 86
• US Class Current: 438/766
• CPC Class Codes: H01L 21/26533 of electrically inactive species in silicon to make buried insulating layers
• CPC Class Codes: H01L 21/76243 using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

Abstract

A method of manufacturing SIMOX heterostructures is disclosed wherein a subcritical dose of oxygen ions is implanted following a first, short "nucleating" implant and a nucleation growth step. The SIMOX structure thus formed has a thin, buried oxide layer and sharp interfaces.

Claims

1. A method of producing a buried insulating layer in a silicon substrate comprising the steps of

A. implanting a subcritical dose of at least one first ion species into said substrate to induce a controlled amount of damage to regions of the silicon lattice within a subsurface layer;

B. creating nucleation sites in the damaged silicon lattice within said subsurface layer by heating the substrate following ion implantation to enlarge the damaged regions;

C. implanting oxygen ions into said subsurface layer following the creation of the nucleation sites to deliver a total oxygen dose to the substrate less than 1.5×

10¹⁸ ions/cm² ; and

D. annealing said substrate to form a buried layer of silicon dioxide in said silicon substrate.

2. The method of claim 1 wherein said first ion species comprises oxygen ions.

3. The method of claim 1 wherein said first ion species is selected from the group consisting of argon and silicon.

4. The method of claim 1 wherein said nucleation sites are formed by heating said substrate at a temperature of about 700-800°

C. for about 10-20 hours.

5. The method of claim 4 wherein sad substrate is heated at about 800°

C. for about 20 hours.

6. The method of claim 1 wherein said first ion species is implanted at a dose of about 10¹⁶ to 10¹⁷ ions/cm².

7. The method of claim 1 wherein said oxygen ions are implanted at a dose of about 10¹⁷ to 10¹⁸ ions/cm².

8. The method of claim 1 wherein said first ion species are implanted at a substrate temperature within the range of about 400°

-450°

C.

9. The method of claim 1 wherein said oxygen ions are implanted at a substrate temperature within the range of about 600°

-750°

C.

10. The method of claim 1 wherein said annealing temperature is within the range of about 1100°

-1400°

C.

11. The method of claim 10 wherein said annealing temperature is within the range of about 1300°

-1350°

C.

12. The method of claim 1 wherein said oxygen ions are implanted with an increasing ion beam energy.

13. The method of claim 12 wherein said ion beam energy is increased continuously.

14. The method of claim 12 wherein said ion beam energy is increased in multiple, discrete steps.