Apparatus for directional low pressure chemical vapor deposition (DLPCVD)

• US 5,290,358 A
• Filed: 09/30/1992
• Issued: 03/01/1994
• Est. Priority Date: 09/30/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Hsieh, Julian J., Rubloff, Gary W.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Paladugu, Ramamohan Rao
• Application Number:
  US07/954,633
• Time in Patent Office: 517 Days
• Field of Search: 118/720, 118/725, 118/715, 427/248.1, 156/613, 437/100, 437/235, 437/237
• US Class Current: 118/715
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

System and method for controlling the thickness profile of deposited thin film layers over three-dimensional topography are disclosed, wherein low pressure chemical vapor deposition conditions are employed with the reactant beam collimated and chosen to impinge at a specific angle onto the surface, such that the reactive sticking coefficient s_r with the deposition surface is <1. Compared with conventional approaches, this method permits new shapes of the deposited thin film layer to be achieved over topography (such as trenches), including (i) tapered rather than re-entrant shapes (i.e., thicker at bottom rather than at top), (ii) enhanced sidewall and/or bottom coverage of trench structures (cf. the top surface), (iii) voidless, seamless filling of trench or via structures even at high aspect ratio (depth/width), and (iv) asymmetric sidewall coverage.

Claims

1. A system for controlling the thickness profile of deposited thin film layers over three-dimensional topography, comprising:

means for providing a gaseous reactant beam to product material deposition on a surface;

means for collimating said beam, such that the beam flux is directional rather than isotropic;

means for arranging a specific angle of incidence of said beam onto the surface;

means for providing a beam species such that the reaction probability of said beam with the surface is less than 100%;

means for producing a low pressure environment for said beam and said surface, such that beam directionality is maintained on a length scale up to and including the dimension between said collimating means and said surface where deposition is to take place.

2. A system as in claim 1 wherein said collimating means causes the collimation of said beam to be approximately ±

60°

or less.

3. A system as in claim 1 wherein said collimating means comprises means for passing said beam through a set of apertures designed to achieve directionality of the beam to produce collimation.

4. A system as in claim 3 wherein said beam passing means comprises a set of nozzles.

5. A system as in claim 1 wherein said means for providing a beam species comprises means for adding at least one of reactive species and inert carrier species to said beam.

6. A system as in claim 1 wherein said means for providing a beam species provides beam species selected from the group consisting of silanes and chlorosilanes, organometallic and organosilicon species, metal fluorides, dopant precursors, known precursors for chemical vapor deposition, other volatile species, and combinations thereof.

7. A system as in claim 1 wherein said beam species are selected from the group consisting of silane, higher silanes, chlorosilanes, B₂ H₆, PH₃, AsH₃, tetraethylorthosiloxane (commonly known as TEOS), WF₆, TiCl₄, NH₃, N₂, O₂, O₃, H₂ O, and combinations thereof.

8. A system as in claim 1 wherein said collimating means comprises means for directing said beam onto said surface with an angle of incidence of 0°

.

9. A system as in claim 1 wherein said collimating means comprises means for direction said beam onto said surface with an oblique angle of incidence between 0°

and 90°

.

10. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a total pressure of less than or equal to 1 torr.

11. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a total pressure in the range from about 0.1 millitorr to 500 millitorr.

12. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a surface temperature in the range from room temperature to 1100°

C.

13. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a surface temperature in the range from about 250°

to 750°

C.

14. A system as in claim 1 further comprising means for adding another gaseous species to said low pressure environment, to provide additional isotropic or directional impingement on said surface.

15. A system as in claim 1 further comprising means for heating said collimating means.