Photoelectric element

• US 5,290,367 A
• Filed: 09/03/1992
• Issued: 03/01/1994
• Est. Priority Date: 10/01/1991
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Square Enix
• Original Assignee: Agency of Industrial Science & Technology (Government of Japan), Ministry of International Trade & Industry (Government of Malaysia)
• Inventors: Hayashi, Yutaka, Takato, Hidetaka
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/940,395
• Time in Patent Office: 544 Days
• Field of Search: 136/255, 257/461
• US Class Current: 136/255
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/0475 PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays PV modules composed of a plurality of thin film solar cells deposited on the same substrate H01L31/046
• CPC Class Codes: H01L 31/07 the potential barriers being only of the Schottky type
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A photoelectric element includes a first region having a light-receiving surface. A second region having a short side length not greater than twice the minority carrier diffusion length of the first region is provided on at least one portion of the first region to form a photovoltaic mechanism in conjunction with the first region. A barrier layer is provided to cover at least those portions of the light-receiving surface of the first region not covered by the second region, and a transparent conductive film is provided on the barrier layer and electrically connected to at least one second region. The voltage of the second region generated by incident light is applied through the transparent conductive film to the light-receiving surface of the first region to produce an electric field in the direction inducing majority carriers.

Claims

1. A photoelectric element comprising:

a first region of a semiconductor of a first conductivity type having front and rear major surfaces, one of which constitutes a light-receiving surface;

at least one second region provided on at least one portion of the light-receiving side of the first region to form a photovoltaic mechanism in conjunction with the first region, said second region having a shorter side, in plan view, whose length is not more than twice the minority carrier diffusion length of the first region;

a barrier layer covering at least those portions of the light-receiving surface of the first region at which the second region is not provided; and

a transparent conductive film in electrical contact with the at least one second region and also in contact with the barrier layer, for enabling a voltage generated by light incident on the light-receiving surface to be applied to the light-receiving surface under the barrier layer as a bias voltage of a polarity inducing majority carriers of the semiconductor constituting the first region.

2. A photoelectric element according to claim 1, wherein:

the second region is constituted as a plurality of separate subregions or as a continuous region having a plurality of spaced apart parts;

the distance between peripheries of adjacent ones of the plurality of subregions or between adjacent parts being not greater than

space="preserve" listing-type="equation">(2LnkT/q)·

1n{(A.sub.1 +A.sub.2)/A.sub.2 }V.sub.0

where

L is the minority carrier diffusion length of the semiconductor constituting the first region,

A₁ is the total effective light-receiving area constituted by the portion of the major surface of the light-receiving side of the first region that is not covered by the second region,

A₂ is the total light-receiving area of the second region,

V₀ is the open-circuit voltage when A₁ =0;

n is the n value in the voltage-current equation for the diode characteristics when A₁ =0

k is Boltzmann'"'"'s constant,

T is absolute temperature, and

q is electronic charge.

3. A photoelectric element according to claim 1, wherein a part of the transparent conductive film constitutes the second region.

4. A photoelectric element according to claim 1, further provided with a third region disposed between and electrically connecting the transparent conductive film and the second region.

5. A photoelectric element according to claim 1, further comprising a first electrode electrically connected with the transparent conductive film, a second electrode provided over the major surface of the first region on the side that is opposite from the light-receiving surface thereof, and a high-concentration impurity region provided on the opposite major surface, for electrically connecting the second electrode with the opposite major surface.

6. A photoelectric element according to claim 5, further comprising a second barrier layer disposed between the opposite major surface of the first region and the second electrode, said second barrier layer being disposed at portions other than those where the high-concentration impurity region and the second electrode are in contact.

7. A photoelectric element according to claim 1, further comprising a first electrode electrically connected with the transparent conductive film, a second electrode provided over the major surface of the first region on the side that is opposite from the light-receiving surface thereof, and a heterojunction forming region for repelling minority carriers provided between the second electrode and the first region.

8. A photoelectric element according to claim 1, wherein the portions of the major surface on the light-receiving side of the first region that are not covered by the second region contain impurity atoms of the same conductivity type as that of the first region and in a concentration that does not exceed the degeneracy concentration.