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Semiconductor device and method of fabricating semiconductor device

  • US 5,291,065 A
  • Filed: 12/14/1992
  • Issued: 03/01/1994
  • Est. Priority Date: 12/16/1991
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • (a) a metal base plate,(b) a composite substrate mounted on said metal base plate,said composite substrate including;

    (b-1) a first ceramic substrate joined onto said metal base plate,(b-2) a first metal plate joined to an upper surface of said first ceramic substrate and formed into a predetermined pattern, said first metal plate having first and second regions arranged parallel to the upper surface of said first ceramic substrate,(b-3) a second ceramic substrate joined to an upper surface of said first region of said first metal plate, and(b-4) a second metal plate joined to an upper surface of said second ceramic substrate and formed into a predetermined pattern,said semiconductor device further comprising;

    (c) a power semiconductor device mounted on an upper surface of said second region of said first metal plate, and(d) a control semiconductor device mounted on an upper surface of said second metal plate for controlling said power semiconductor device,at least said second region of said first metal plate including;

    (b-3-1) a first metal layer joined to the upper surface of said first ceramic substrate,(b-3-2) a second metal layer bonded onto said first metal layer, and(b-3-3) a third metal layer bonded onto said second metal layer,said second metal layer being lower in coefficient of thermal expansion than said first and third metal layers,said first region of said first metal plate being an electrode layer to be held at a constant potential.

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