Light emitting device

• US 5,291,098 A
• Filed: 03/09/1992
• Issued: 03/01/1994
• Est. Priority Date: 03/07/1991
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Okita, Masami, Akimoto, Katsuhiro
• Primary Examiner(s): Yusko, Donald J.
• Assistant Examiner(s): PATEL, NIMESHKUMAR D
• Application Number:
  US07/848,124
• Time in Patent Office: 722 Days
• Field of Search: 313/498, 313/506, 313/509
• US Class Current: 313/506
• CPC Class Codes: H05B 33/12 Light sources with substantially two-dimensional radiating surfaces
• CPC Class Codes: H05B 33/26 characterised by the composition or arrangement of the conductive material used as an electrode

Abstract

A light emitting device has a transparent substrate, a substantially transparent first electrode layer formed on the transparent substrate, a phosphor layer formed on the first electrode layer, a second electrode layer formed on the phosphor layer, an insulating layer formed on the second electrode layer, and a third electrode layer formed on the insulating layer. A hot electron is generated by the application of a voltage to the second and third electrode layers, and the light emitting device is energized to become luminuous by injecting the hot electron thus generated into the phosphor layer.

Claims

1. A light emitting device comprising:

(a) a transparent substrate;

(b) a substantially transparent first electrode layer formed on said transparent substrate;

(c) a phosphor layer formed on said first electrode layer;

(d) a second electrode layer formed on said phosphor layer;

(e) an insulating layer formed on said second electrode layer; and

(f) a third electrode layer formed on said insulating layer, wherein a hot electron is generated by the application of a voltage to said second and third electrode layers and said light emitting device is energized to become luminuous by injecting said hot electron thus generated into said phosphor layer.

2. A light emitting device according to claim 1, in which said phosphor layer is formed of a phosphor whose radiation center is a donor acceptor pair type radiation center.

3. A light emitting device according to claim 1, in which a thickness of said second electrode layer is set in a range of from 10 Å

to 100 Å and

a thickness of said insulating layer formed on said second electrode layer is set to about several 10s of angstroms.

4. A light emitting device according to claim 1, in which said second electrode layer is made of aluminum (Al) and said insulating layer formed on said second electrode layer is made of aluminum oxide which results from oxidizing said second electrode layer.

5. A light emitting device according to claim 1, in which voltages applied to said first, second and third electrodes are set in such a fashion that an energy of said hot electron generated exceeds a threshold value of electron hole pair generation of said phosphor.