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Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching

  • US 5,292,400 A
  • Filed: 03/23/1992
  • Issued: 03/08/1994
  • Est. Priority Date: 03/23/1992
  • Status: Expired due to Fees
First Claim
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1. An rf head for a plasma assisted chemical etching reactor, said rf head comprising:

  • a dielectric insulator having a plurality of cavities therein, and wherein each cavity occupies a different volume of said dielectric insulator;

    a plurality of electrodes, wherein an electrode is positioned within each cavity;

    a plurality of process gas feed tubes, wherein each process gas feed tube is connected between a supply of process gas and one of the plurality of cavities; and

    a plurality of rf power conductors, wherein each conductor is connected between a supply of rf power and an electrode positioned within a cavity.

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