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Method for forming a MOS transistor and structure thereof

  • US 5,292,675 A
  • Filed: 12/14/1992
  • Issued: 03/08/1994
  • Est. Priority Date: 12/24/1991
  • Status: Expired due to Term
First Claim
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1. A method for forming a MOS transistor comprising the steps of:

  • forming a semiconductor film on a substrate;

    forming a gate insulating film on said semiconductor film;

    forming a conductive material on said gate insulating film;

    patterning said conductive material into an island;

    removing a portion of said gate insulating film by etching to form an insulating film thinner than said gate insulating film;

    forming a gate electrode by reducing a width of said island by removing a portion of said island by etching; and

    introducing an impurity into said semiconductor film with said gate electrode as a mask wherein the amount of said removed portion of the gate insulating film is controlled so that the impurity concentration in said semiconductor film under said insulating film thinner than said gate insulating film is rendered larger than that in said semiconductor film under the removed portion of said island by said introducing step.

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