Semiconductor quantum dot light emitting/detecting devices

• US 5,293,050 A
• Filed: 03/25/1993
• Issued: 03/08/1994
• Est. Priority Date: 03/25/1993
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Chapple-Sokol, Jonathan D., Subbanna, Seshadri, Tejwani, Manu J.
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/037,154
• Time in Patent Office: 348 Days
• Field of Search: 257/21, 257/17, 257/19, 257/22, 257/18, 257/84, 257/85, 257/184, 257/185
• US Class Current: 257/17
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/42 Coupling light guides with opto-electronic elements
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: Y10S 148/099 LED, multicolor
• CPC Class Codes: Y10S 438/962 Quantum dots and lines

Abstract

A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.

Claims

1. A semiconductor light emitting and light detecting device, comprising:

a first doped silicon layer of a first conductivity type;

an intrinsic silicon epitaxial layer formed on said doped silicon layer;

at least one quantum dot embedded within said intrinsic silicon epitaxial layer; and

a second doped silicon layer of a second conductivity type formed on said intrinsic silicon epitaxial layer.

2. A semiconductor light emitting and light detecting device according to claim 1, wherein said at least one quantum dot comprises semiconducting material from Group IV of the Periodic Table of the Elements.

3. A semiconductor light emitting and light detecting device according to claim 2, wherein said semiconducting material comprises germanium.

4. A semiconductor light emitting and light detecting device according to claim 2, wherein said semiconducting material comprises a silicon-germanium alloy.

5. A semiconductor light emitting and light detecting device according to claim 1, wherein multiple layers each comprising at least one quantum dot are embedded in said intrinsic silicon epitaxial layer.