Glass substrate for a semiconductor device and method for making same

• US 5,294,238 A
• Filed: 03/18/1992
• Issued: 03/15/1994
• Est. Priority Date: 03/27/1991
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukada, Takeshi, Sakamoto, Naoya
• Primary Examiner(s): Jones, W. Gary
• Assistant Examiner(s): Griffin, Steven P.
• Application Number:
  US07/852,518
• Time in Patent Office: 727 Days
• Field of Search: 65/60.1, 65/60.5, 65/60.8, 65/95, 65/134, 65/33, 65/60.2, 501/7, 106/286.7
• US Class Current: 65/60.2
• CPC Class Codes: C03C 17/3435 comprising a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: H01L 21/4803 Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks H01L21/4846 takes precedence; printed circuit boards H05K1/00
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A glass substrate usable for a semiconductor device which shrinks less during a heating process. Specifically, lithium is added to the glass substrate material prior to formation. Further, the glass substrate can be thermal annealed in advance. In accordance with the present invention, it is possible to reduce substrate shrinkage even during TFT processing, by using glass material including more than 4% by weight of lithium, and further by heating the glass substrate at a temperature below the glass strain point temperature.

Claims

1. A method of making a glass substrate for a semiconductor device, said method comprising:

adding more than 4% by weight of lithium to a molten glass material to form a lithium containing glass material;

forming a glass substrate from said lithium containing glass material;

thermal annealing said glass substrate in order to shrink said glass substrate prior to preparing said semiconductor device on said glass substrate; and

preparing said semiconductor device on said glass substrate.

2. A method of making a glass substrate for a semiconductor device according to claim 1, wherein said thermal annealing said glass substrate is at a temperature below a glass strain point of said glass substrate prior to preparing said semiconductor device.

3. A method of making a glass substrate for a semiconductor device according to claim 2, wherein a silicon oxide film is formed on the glass substrate before said thermal annealing step.

4. A method of making a glass substrate for a semiconductor device, said method comprising:

adding more than 4% by weight of lithium to a molten glass material to form a lithium containing glass material;

forming a glass substrate from said lithium containing glass material;

forming a silicon nitride film having a blocking action to lithium diffusion on the glass substrate;

forming a silicon oxide film on said silicon nitride film; and

thermal annealing said glass substrate which includes said silicon nitride film and said silicon oxide film at at temperature below a glass strain point of said glass substrate.

5. A method of making a glass substrate for a semiconductor device according to claim 4, wherein said silicon nitride film is less than 1000 Å

.

6. A method of making a glass substrate for a semiconductor device, said method comprising:

adding more than 4% by weight of lithium to a molten glass material to form a lithium containing glass material;

forming a glass substrate from said lithium containing glass material;

forming a silicon nitride film, which has a blocking action to lithium diffusion, on said glass substrate;

forming a silicon oxide film on said silicon nitride film; and

thermal annealing said glass substrate which includes said silicon nitride film and said silicon oxide film.

7. A method of making a glass substrate for semiconductor device according to claim 6, wherein said silicon nitride film is less than 1000 Å

.

8. A method of making a glass substrate for a semiconductor device comprising the step of:

thermal annealing a glass substrate containing more than 4% by weight of lithium at a temperature less than a glass strain point of said glass substrate; and

preparing said semiconductor device on said glass substrate.