Enhanced radiative zone-melting recrystallization method and apparatus

• US 5,296,089 A
• Filed: 11/24/1992
• Issued: 03/22/1994
• Est. Priority Date: 12/04/1985
• Status: Expired due to Term

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Im, James, Chen, Chenson K.
• Primary Examiner(s): PAL, ASOKKUMAR
• Application Number:
  US07/981,189
• Time in Patent Office: 483 Days
• Field of Search: 156/603, 156/616.1, 156/616.2, 156/616.4, 156/620.7, 156/620.71, 156/620.73, 156/620.75, 164/122.2, 148/DIG. 60, 428/195, 422/245
• US Class Current: 117/46
• CPC Class Codes: C30B 13/00 Single-crystal growth by zone-melting; Refining by zone-melting C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02598 monocrystalline
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 21/02691 Scanning of a beam

Abstract

A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on-insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.

Claims

1. A method for preparing a SOI wafer having a monocrystalline semiconductor material film on a substrate comprising the steps of:

supporting the wafer;

providing a first heater positioned over the wafer, the first heater being stationary relative to the wafer;

providing a second heater positioned below the wafer, the second heater being stationary relative to the wafer;

providing a third heater adapted for heating regions of the film to melt the regions by relative motion between the third heater and the wafer;

radiatively heating the film using the first heater and the second heater such that a relative thermal contribution of the first heater and the second heater produces a base temperature in the film below the melting point of the film;

heating contiguous regions of the film with radiant energy from the third heater to melt the regions of the film; and

solidifying the contiguous regions of the film to produce substantially monocrystalline semiconductor material.

2. The method of claim 1 wherein the steps of heating and solidifying include successively heating to melt and solidify contiguous regions of the film.

3. The method of claim 1 wherein a radiation intensity profile is controlled by movement of the third heater relative to a surface of the film.

4. The method of claim 1 wherein said radiatively heating step includes uniformly illuminating the film across the wafer.

5. The method of claim 4 wherein the first heater comprises a first radiative source for heating to the base temperature, the second heater comprises a second heat source for heating to the base temperature, and the third heater comprises a third radiative source for heating to melt the film such that the radiant heat input is controlled by adjusting the relative radiation contribution of said first and second sources.

6. The method of claim 1 wherein heating to the base temperature is done by a combination of radiative and conductive heating.

7. The method of claim 5 wherein the source conductively heats the film and the radiant heat input is controlled by controlling the relative heat contribution of the first, second and third sources.

8. The method of claim 1 wherein step of supporting includes supporting the wafer about the periphery of the wafer with an annular support member.

9. The method of claim 8 wherein the supporting member is a heat sink for reducing edge defects.

10. The method of claim 8 wherein the supporting member is an insulating member for reducing edge defects.