Apparatus for forming thin film

• US 5,296,122 A
• Filed: 02/18/1992
• Issued: 03/22/1994
• Est. Priority Date: 03/29/1989
• Status: Expired due to Term

• Current Assignee: Teruaki Katsube, Terumo Kabushiki Kaisha (Terumo Corporation)
• Original Assignee: Teruaki Katsube, Terumo Kabushiki Kaisha (Terumo Corporation)
• Inventors: Yamaguchi, Shuichiro, Uchida, Naoto, Shimomura, Takeshi, Katsube, Teruaki
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/837,873
• Time in Patent Office: 763 Days
• Field of Search: 204/192.11, 204/298.04
• US Class Current: 204/298.04
• CPC Class Codes: C23C 14/12 Organic material
• CPC Class Codes: C23C 14/46 by ion beam produced by an external ion source
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Abstract

In the manufacture of a substrate with a hydrophobic film used for a reference electrode of an ion sensor or the like, a hydrophobic film is formed on a substrate by irradiating a target consisting of a hydrophobic compound with a neutral atom beam and thereby effecting sputtering. The apparatus for effecting the sputtering comprises a target base disposed in a vacuum chamber, an atom beam gun for irradiating a target on the target base with a neutral beam, a substrate base and a shutter for controlling the passage of sputtered particles. A thin film that is manufactured is suitable for an ion sensor, such as an ISFET or the like or an enzyme sensor.

Claims

1. An apparatus constructed and arranged for manufacturing a thin film by depositing sputtered particles on a predetermined surface of a substrate comprising:

a vacuum chamber;

a first front chamber formed adjacent to said vacuum chamber;

a first on-off means for on-off operating the passage between said front chamber and vacuum chamber;

a target base disposed in said vacuum chamber and for holding a target having at least a hydrophobic organic substance;

a first moving mechanism for moving said target base between said vacuum chamber and first front chamber;

a neutral beam generation means for irradiating said target supported by said target base with a neutral beam including ions with more than 95% thereof neutralized;

a substrate base for supporting said substrate; and

shutter means disposed between said substrate base and target base for controlling the passage and blocking of said sputtered particles.

2. The apparatus according to claim 1, which comprises a plurality of sputtering means each including said neutral beam generation means, target base and shutter means such that sputtered particles generated by each said sputtering means are collected on said substrate base.

3. The apparatus according to claim 1, which comprises a plurality of neutral beam generating means, said target being irradiated as common target by neutral beams shot from said individual neutral beam generation means to provide for improvement of the uniformity of film thickness distribution.

4. The apparatus according to claim 1, which further comprises a substrate base drive mechanism for rotating, linearly moving, angularly moving, and/or scanning said substrate base, thereby providing for uniform film thickness in a predetermined surface of said substrate.

5. The apparatus according to claim 4, wherein said substrate base is provided with a substrate temperature control means.

6. The apparatus according to claim 1, which further comprises a target base drive mechanism for rotating, linearly moving, angularly moving, and/or scanning said target base, thereby providing for uniform film thickness in a predetermined surface of said substrate.

7. The apparatus according to claim 1, which further comprises a second front chamber formed adjacent to said vacuum chamber, second on-off means for on-off operating the passage between said second front chamber and vacuum chamber, and second moving mechanism for moving said substrate base between said vacuum chamber and second front chamber.

8. The apparatus according to claim 1, which further comprises on-off means for on-off controlling the communication between said neutral beam generation means and vacuum chamber.