High power semiconductor assembly

• US 5,297,001 A
• Filed: 10/08/1992
• Issued: 03/22/1994
• Est. Priority Date: 10/08/1992
• Status: Expired due to Fees

• Current Assignee: Sundstrand Corporation (Rtx Corporation)
• Original Assignee: Sundstrand Corporation (Rtx Corporation)
• Inventors: Sterling, Robert J.
• Primary Examiner(s): Tolin, Gerald P.
• Application Number:
  US07/958,154
• Time in Patent Office: 530 Days
• Field of Search: 165/80.3, 165/185, 257/705-707, 257/709, 257/712, 257/713, 257/717, 174/16.3, 174/252, 174/52.4, 361/382, 361/383, 361/386-389, 361/395
• US Class Current: 361/717
• CPC Class Codes: H01L 23/04 characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/053 the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/433 Auxiliary members in containers characterised by their shape, e.g. pistons
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/351 Thermal stress

Abstract

An insulated gate bipolar transistor assembly (10) in accordance with the invention includes an insulated gate bipolar transistor die (32) having gate, at least one emitter and collector electrodes and first and second opposed surfaces; a heat conductive electrically insulative substrate (30) thermally coupled to the first surface for conducting heat away from the first surface of the die and having contacts for conducting electric current between the gate electrode and a gate terminal (16) and a collector electrode and a collector terminal (18) of the assembly; a first heat radiator (12) thermally coupled to the substrate for radiating heat flowing from the first surface of the die through the heat conductive insulative substrate; a heat conductive electrical insulator (46) having first and second surfaces with the first surface being thermally coupled to the second surface of the die and a plurality of apertures (51) aligned with the emitter electrode (44) of the die; an emitter contact (52) disposed on the second surface of the heat conductive insulator having a plurality of spring contacts (54) extending through the apertures of the insulator for conducting electric current between the emitter electrode and an emitter terminal of the assembly; and a second heat radiator (62) which is electrically insulative and thermally coupled to the emitter contact for radiating heat flowing from the second surface of the die through the emitter contact.

Claims

1. An insulated gate bipolar transistor assembly comprising:

an insulated gate bipolar transistor die having gate, at least one emitter and collector electrodes and first and second opposed surfaces;

a heat conductive electrically insulative substrate thermally coupled to the first surface for conducting heat away from the first surface of the die and having conductors for conducting electric current between the gate electrode and a gate terminal and a collector electrode and a collector terminal of the assembly;

a first heat radiator thermally coupled to the substrate for radiating heat flowing from the first surface of the die through the heat conductive insulative substrate;

a heat conductive electrical insulator having first and second surfaces with the first surface being thermally coupled to the second surface of the die and a plurality of apertures aligned with the emitter electrode of the die;

an emitter contact disposed on the second surface of the insulator having a plurality of spring contacts extending through the apertures of the insulator for conducting electric current between the emitter electrode and an emitter terminal of the assembly; and

a second heat radiator which is electrically insulative and thermally coupled to the emitter contact for radiating heat flowing from the second surface of the die through the emitter contact.

2. An insulated gate bipolar transistor assembly in accordance with claim 1 further comprising:

a thermally and electrically conductive emitter contact plate having a first surface electrically and thermally contacting the emitter contact and a second surface electrically and thermally contacting the emitter terminal and thermally contacting the second heat radiator with the emitter terminal extending through an aperture in the second heat radiator.

3. An insulated gate bipolar transistor assembly in accordance with claim 1 further comprising:

a collector contact spring electrically coupled to the conductor of the heat conductive electrically insulative substrate through which current flows between the collector electrode and the collector terminal and electrically coupled to the collector terminal which extends through an aperture in the second heat radiator.

4. An insulated gate bipolar transistor assembly in accordance with claim 2 further comprising:

a collector contact spring electrically coupled to a conductor of the heat conductive electrically insulative substrate through which current flows between the collector electrode and the collector terminal and electrically coupled to a collector contact plate which contacts the collector terminal extending through the second heat radiator.

5. An insulated gate bipolar transistor assembly in accordance with claim 1 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

6. An insulated gate bipolar transistor assembly in accordance with claim 5 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

7. An insulated gate bipolar transistor assembly in accordance with claim 2 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

8. An insulated gate bipolar transistor assembly in accordance with claim 7 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

9. An insulated gate bipolar transistor assembly in accordance with claim 3 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

10. An insulated gate bipolar transistor assembly in accordance with claim 9 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

11. An insulated gate bipolar transistor assembly in accordance with claim 4 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

12. An insulated gate bipolar transistor assembly in accordance with claim 11 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

13. An insulated gate bipolar transistor assembly in accordance with claim 2 further comprising:

a gate terminal extending through an aperture in the second heat radiator to the conductor for conducting electric current between the gate electrode and the gate terminal; and

an emitter sense terminal extending through an aperture in the second heat radiator into electrical contact with the emitter contact.

14. An insulated gate bipolar transistor assembly in accordance with claim 1 further comprising:

at least one projection projecting upward from the second heat radiator between an emitter terminal extending through the second heat radiator and a gate terminal extending through the second heat radiator with the at least one projection radiating heat and providing a barrier against arcing between the terminals extending through the second heat radiator.

15. An insulated gate bipolar transistor assembly in accordance with claim 1 further comprising:

at least one projection projecting upward from the second heat radiator between an emitter terminal extending through the second heat radiator and a collector terminal extending through the second heat radiator with the at least one projection radiating heat and providing a barrier against arcing between the terminals extending through the second heat radiator.

16. An insulated gate bipolar transistor assembly in accordance with claim 5 further comprising:

a thermally and electrically conductive emitter contact plate having a first surface contacting the emitter contact and a second surface electrically contacting the emitter terminal and thermally contacting the second heat radiator with the emitter terminal extending through an aperture in the second heat radiator and a hermetic seal between the second surface and the second heat radiator;

a collector contact spring electrically coupled to the conductor of the heat conductive electrically insulative substrate through which current flows between the collector electrode and a collector terminal that is electrically coupled to the collector terminal which extends through an aperture in the second heat radiator; and

a collector contact plate which is hermetically sealed to the second surface of the second heat radiator and which contacts the collector terminal extending through the second heat radiator.

17. A power semiconductor switch assembly comprising:

a power switch semiconductor die having a plurality of electrodes and first and second opposed surfaces;

a heat conductive electrically insulative substrate thermally coupled to the first surface for conducting heat away from the first surface of the die and having conductors for conducting electric current between a control electrode and a control terminal and a first power electrode and a first power electrode terminal of the assembly;

a first heat radiator thermally coupled to the substrate for radiating heat flowing from the first surface of the die through the heat conductive insulative substrate;

a heat conductive electrical insulator having first and second surfaces with the first surface being thermally coupled to the second surface of the die and at least one aperture aligned with a second power electrode of the die;

a second power electrode contact disposed on the second surface of the insulator having at least one spring contact extending through said at least one aperture of the insulator for conducting electric current between the second power electrode and a second power electrode terminal of the assembly; and

a second heat radiator which is electrically insulative and thermally coupled to the second power electrode contact for radiating heat flowing from the second surface of the die through the second power electrode contact.

18. A power semiconductor switch assembly in accordance with claim 17 further comprising:

a thermally and electrically conductive second power electrode contact plate having a first surface electrically and thermally contacting the second power electrode contact and a second surface electrically and thermally contacting the second power electrode terminal and thermally contacting the second heat radiator with the second power electrode terminal extending through an aperture in the second heat radiator.

19. A power semiconductor switch assembly in accordance with claim 17 further comprising:

a first power electrode contact spring electrically coupled to the conductor of the heat conductive electrically insulative substrate through which current flows between the first power electrode and the first power electrode terminal that is electrically coupled to the first power electrode terminal which extends through an aperture in the second heat radiator.

20. A power semiconductor switch assembly in accordance with claim 18 further comprising:

a first power electrode contact spring electrically coupled to the conductor of the heat conductive electrically insulative substrate through which current flows between the first power electrode and the first power electrode terminal that is electrically coupled to a first power electrode contact plate which contacts the first power electrode terminal extending through the second heat radiator.

21. A power semiconductor switch assembly in accordance with claim 17 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

22. A power semiconductor switch assembly in accordance with claim 21 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

23. A power semiconductor switch assembly in accordance with claim 18 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

24. A power semiconductor switch assembly in accordance with claim 23 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

25. A power semiconductor switch assembly in accordance with claim 19 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

26. A power semiconductor switch assembly in accordance with claim 25 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

27. A power semiconductor switch assembly in accordance with claim 20 further comprising:

a seal ring joined to the first heat radiator and the second heat radiator which forms a hermetic seal and which loads the first and second surfaces of the die in compression to promote heat flow from the first and second surfaces of the die respectively to the first and second heat radiators.

28. A power semiconductor switch assembly in accordance with claim 27 wherein the seal ring comprises:

a first end having a section which extends radially inward from an outside diameter of the second radiator and is joined to the first radiator, a second end having a section which extends radially inward from the outside diameter of the second heat radiator and is joined to the second heat radiator and a thermal expansion joint contained within the ring.

29. A power semiconductor switch assembly in accordance with claim 18 further comprising:

a control electrode extending through an aperture in the second heat radiator to the conductor for conducting electric current between the control electrode and the control electrode terminal; and

a second power electrode sense terminal extending through an aperture in the second heat radiator into electrical contact with the second power electrode contact.

30. A power switch semiconductor assembly in accordance with claim 17 further comprising:

at least one projection projecting upward from the second heat radiator between a second power electrode terminal extending through the second heat radiator and a control electrode terminal extending through the second heat radiator with the at least one projection radiating heat and providing a barrier against arcing between the terminals extending through the second heat radiator.

31. A power switch semiconductor assembly in accordance with claim 17 further comprising:

at least one projection projecting upward from the second heat radiator between a second power electrode terminal extending through the second heat radiator and a first power electrode terminal extending through the second heat radiator with the at least one projection radiating heat and providing a barrier against arcing between the terminals extending through the second heat radiator.

32. A power switch semiconductor assembly in accordance with claim 22 further comprising:

a thermally and electrically conductive second power electrode contact plate having a first surface contacting the second power electrode contact and a second surface electrically contacting the second power electrode terminal and thermally contacting the second heat radiator with the second power electrode terminal extending through an aperture in the second heat radiator and a hermetic seal between the second surface and the second heat radiator;

a first power electrode contact spring electrically coupled to the conductor of the heat conductive electrically insulative substrate through which current flows between the first power electrode and a first power electrode terminal that is electrically coupled to the first power electrical terminal which extends through an aperture in the second heat radiator; and

a first power electrode contact plate which is hermetically sealed to the second surface of the second heat radiator and which contacts the first power electrode terminal extending through the second heat radiator.