Titanium-tungsten target material and manufacturing method thereof

• US 5,298,338 A
• Filed: 07/16/1992
• Issued: 03/29/1994
• Est. Priority Date: 06/15/1990
• Status: Expired due to Fees

• Current Assignee: Hitachi Metals (Thailand) Ltd.
• Original Assignee: Hitachi Metals (Thailand) Ltd.
• Inventors: Hiraki, Akitoshi
• Primary Examiner(s): Nelson, Peter A.
• Assistant Examiner(s): GREAVES, JOHN N
• Application Number:
  US07/914,545
• Time in Patent Office: 621 Days
• Field of Search: 29/182.8, 75/65 EB, 75/150, 75/214, 75/230, 75/238, 75/248, 156/664, 204/15, 204/192.32, 357/71, 361/321, 419/8, 428/664, 428/569
• US Class Current: 428/569
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01J 37/3429 Plural materials
• CPC Class Codes: Y10T 428/12014 having metal particles
• CPC Class Codes: Y10T 428/1216 Continuous interengaged phases of plural metals, or oriented fiber containing
• CPC Class Codes: Y10T 428/12174 Mo or W containing

Abstract

A titanium-tungsten target material used to form, by sputtering, a barrier metal or the like for use in semiconductor devices. The titanium-tungsten target material is substantially composed of tungsten particles and a titanium-tungsten alloy phase surrounding the tungsten particles. The area ratio at which tungsten grains occupy in a cross section of the titanium-tungsten target material is, preferably, not more than 15%, more preferably, not more than 10%. If the average crystal grain size of the target material is not more greater 15 μm, a uniform thin film can be obtained by sputtering. The target material can be obtained by sintering a titanium powder and a tungsten powder.

Claims

1. A titanium-tungsten target material consisting essentially of a tungsten phase and a titanium-tungsten alloy phase surrounding the tungsten phase.

3. A titanium-tungsten target material according to claim 1 or 2, wherein the area ratio at which tungsten phase occupy in a cross section of the titanium-tungsten target material is not more than 15%.

5. A titanium-tungsten target material according to claim 1 not containing a titanium phase.

2. A titanium-tungsten target material consisting essentially of a tungsten phase and a titanium-tungsten alloy phase surrounding the tungsten phase, wherein the average crystal grain size is not greater than 15 μ

m.

6. A titanium-tungsten target material according to claim 2 not containing a titanium phase.

4. A method of manufacturing a titanium-tungsten target, comprising the steps of:

blending and milling a tungsten powder and a hydrogenated titanium powder having a grain size not greater than 25 μ

m so that a milled powder having an average grain size smaller than 5 μ

m and a maximum grain size smaller than 10 μ

m are obtained;

press-sintering the powder after or during a dehydrogenation treatment to form a sintered material; and

heating the sintered material at 1300°

to 1550°

C. to form a target consisting essentially of a tungsten phase and a titanium-tungsten alloy phase surrounding the tungsten phase.

7. A method according to claim 4, wherein the press-sintered and heat-treated titanium-tungsten target does not contain a titanium phase.