Line width control in a radiation sensitive polyimide

• US 5,300,403 A
• Filed: 06/18/1992
• Issued: 04/05/1994
• Est. Priority Date: 06/18/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Berger, Daniel G., Angelopolus, Marie, Wilkens, Peter J., Perfecto, Eric D.
• Primary Examiner(s): Kight, III, John
• Assistant Examiner(s): Truong, Duc
• Application Number:
  US07/900,975
• Time in Patent Office: 656 Days
• Field of Search: 430/325, 430/327, 430/328, 430/330, 430/4, 430/5
• US Class Current: 430/325
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking

Abstract

Standard processing techniques for creating a patterned polyimide film from a radiation sensitive polyimide film forming composition are modified to include a post-develop, flood exposure/hardening step which crosslinks precursors of the polyimide film prior to curing. The flood exposure/hardening step prevents pull-back of the wall profile which occurs during the shrinkage of radiation sensitive polyimide film forming composition which occurs during thermal curing.

Claims

1. A method of retaining the definition of features in a radiation sensitive polyimide film forming composition subsequent to imidization cure, comprising the steps of:

applying a radiation sensitive polyimide film forming composition to a substrate;

patterning said radiation sensitive polyimide film forming composition by imaging and developing to produce a stencil pattern of said radiation sensitive polyimide film forming composition, said stencil pattern having a bottom surface adjacent said substrate and a top surface spaced from said substrate by a first thickness of said radiation sensitive polyimide film forming composition, said stencil pattern having features formed therein by said imaging and developing of said patterning step wherein portions of said stencil pattern cover portions of said substrate and wherein portions of said substrate are not covered by said stencil pattern, said features being defined by sidewalls of said radiation sensitive polyimide film forming composition which extend between said bottom surface and said top surface of said radiation sensitive polyimide film forming composition;

post development exposing said stencil pattern to radiation at an energy level and for a time sufficient to crosslink and harden said radiation sensitive polyimide film forming composition at said sidewalls of said features of said stencil pattern to a point which will reduce the tendency of said sidewalls of said features in said radiation sensitive polyimide film forming composition to retract at said top surface during thermal curing; and

thermally curing said radiation sensitive polyimide film forming composition in said stencil pattern to create a patterned polyimide film having a bottom surface adjacent said substrate and a top surface spaced from said substrate by a second thickness which is smaller than said first thickness of said radiation sensitive polyimide film forming composition.

2. A method as recited in claim 1 wherein said step of post development exposing is performed with radiation of all wavelengths in the ultraviolet and visible spectrum.

3. A method as recited in claim 1 wherein said step of post development exposing is performed with radiation at wavelengths ranging from 300 to 500 nanometers.

4. A method as recited in claim 1 further comprising the step of heating aid stencil pattern during said step of post development exposing.

5. A method as recited in claim 4 wherein said step of heating is performed for said time of said post development exposing step.

6. A method as recited in claim 4 wherein said step of heating is performed for part of said time of said post development exposing step.

7. A method as recited in claim 4 wherein said step of heating is performed at a temperature in excess of 100°

C. but less than that required for thermal curing.

8. A method as recited in claim 7 wherein said step of heating is performed at a temperature below 100°

C.

9. A method as recited in claim 1 wherein said step of post development exposing is performed for a time period up to one hour.

10. A method as recited in claim 1 wherein said step of post development exposing is performed using radiation selected from the group consisting of UV/visible radiation, electron beam, ion beam, and x-rays.

11. A method as recited in claim 1 wherein said step of post development exposing provides an exposure dose of radiation ranging from 200 mJ to 10 J.

12. A method as recited in claim 1 wherein said step of thermally curing is performed at a temperature sufficient to imidize polyimide precursor compounds in said radiation sensitive polyimide film forming composition applied to said substrate.

13. A method as recited in claim 12 wherein said step of thermally curing is performed at a temperature on the order of approximately 400°

C.

14. A method as recited in claim 1 wherein said radiation sensitive film forming composition applied during said applying step includes tetracarboxylic acid dianhydrides and diamines.

15. A method as recited in claim 1 further comprising the step of baking said radiation sensitive polyimide film forming composition prior to said step of patterning.

16. A method as recited in claim 1 wherein said patterning step produces a stencil pattern with both isolated and dense features wherein each of said isolated features are separated from other isolated or dense features in said stencil pattern by more than 100 microns and each of said dense features are separated from other isolated or dense features by less than 100 microns, and wherein said post development exposing step is sufficient to reduce differences in relative retraction of said sidewalls at said top surface of said radiation sensitive polyimide film forming composition between said isolated and dense features.