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Method of making staggered gate MOSTFT

  • US 5,300,446 A
  • Filed: 05/05/1993
  • Issued: 04/05/1994
  • Est. Priority Date: 05/08/1992
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing an under-gated semiconductor device comprising the steps of:

  • forming a gate electrode layer on an insulating surface of a substrate;

    forming a gate insulating film covering said gate electrode layer;

    forming a semiconductor layer on said gate insulating film to overlie said gate electrode layer;

    forming a flat coating film covering said semiconductor layer;

    etching back said coating film to partially expose a surface of said semiconductor layer at an area overlying said gate electrode layer and to leave said coating film at two side areas of the exposed surface;

    selectively growing a mask material layer on the exposed surface of said semiconductor layer with a side-projection, by using said left coating film as a mask; and

    removing said left coating film and selectively injecting impurity ions in said semiconductor layer to form an impurity doped source region and an impurity doped drain region at opposite sides of said gate electrode region, by using said mask material layer as an ion injection mask.

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