UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers

• US 5,300,460 A
• Filed: 03/16/1993
• Issued: 04/05/1994
• Est. Priority Date: 10/03/1989
• Status: Expired due to Term

• Current Assignee: Kadant Black Clawson LLC (Kadant Incorporated)
• Original Assignee: Applied Materials Incorporated
• Inventors: Collins, Kenneth S., Wang, David N. K., Maydan, Dan, Yang, Chan-Lon, Roderick, Craig A.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): EVERHART, BYRON S
• Application Number:
  US08/032,744
• Time in Patent Office: 385 Days
• Field of Search: 437/225, 437/228, 427/38, 427/39, 118/50.1, 118/620
• US Class Current: 438/712
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.

Claims

1. A low presure plasma-assisted RIE process for anisotropically etching silicon oxide in the fabrication of integrated circuit devices on semiconductor wafers characterized by the generation, in a vacuum etching chamber, of a plasma using a power source having a frequency range of from about 100 MHz up to about 250 MHz to provide a sheath voltage low enough to avoid risk of damage to devices on said wafer during said etching and maintained at a power density level ranging from about 30 to about 76 watts/inch² of wafer area, while flowing one or more fluorine-containing gases and one or more carbon-containing gases into said vacuum etching chamber containing an anode and a wafer mounted on a cathode and maintained at a pressure within a range of from about 2 to about 500 milliTorr to provide a silicon oxide etch rate of from about 0.3 to 0.75 microns/minute.

2. The process of claim 1 wherein said anode and cathode electrodes have a ratio of anode to cathode area of at least about 2:

1 and an electrode spacing of about 5 cm. or more.

3. The process of claim 1 wherein said anode and cathode electrodes have an electrode spacing ranging from about 5 cm. to about 30 cm.

4. The process of claim 1 wherein said power source is operated within a frequency range of from about 150 MHz to about 200 MHz.

5. The process of claim 2 wherein said pressure in said chamber ranges from about 20 to about 200 milliTorr.

6. The process of claim 2 wherein said power density ranges from about 45 to about 56 watts/in² of wafer area.

7. The process of claim 2 which further comprises flowing an optional source of hydrogen and an optional inert gas through said chamber while said plasa is ignited therein.

8. The process of claim 7 wherein said RIE process comprises a selective process for etching silicon oxide in preference to polysilicon or photoresist wherein the atomic ratio of carbon to fluorine ranges from about 0.1:

1 to about 2;

1 and the atomic ratio of hydrogen present to fluorine ranges from about 0.1;

1 to 0.5;

1 to obtain a ratio of silicon oxide etch (thickness) rate to polysilicon or photoresist etch (thickness) rate of from about 2;

1 to over 30;

1.

11. The process of claim 6 which further comprises flowing an optional source of hydrogen and an optional inert gas through said chamber during said etch.

12. The process of claim 11 wherein said high pressure plasma silicon oxide etch process comprises a selective process for etching silicon oxide in preference to polysilicon or photoresist wherein the atomic ratio of carbon to fluorine ranges from about 0.1:

1 to about 2;

1 and the atomic ratio of hydrogen present to fluorine ranges from about 0.1;

1 to 0.5;

1 to obtain a ratio of silicone oxide etch (thickness) rate to polysilicon or photoresist etch (thickness) rate of from about 2;

1 to over 30;

1.

9. A plasma-assisted high pressure process for etching silicon oxide in the fabrication of integrated circuit devices on semiconductorb wafers characterized by the generation, in a vacuum etching chamber, of a plasma using one or more power sources having a frequency range of from about 100 MHz up to about 200 MHz to provide a sheath voltage low enough to avoid risk of damage to devices on said wafer during said etching and maintained at a power density level ranging from about 30 to about 50 watts/inch² of wafer area, while flowing one or more fluorine-containing gases and one or more carbon-containing gases into said vacuum etching chamber containing an anode and a wafer mounted on a cathode spaced from said anode a distance ranging from about 0.2 to less than about 5 cm., said vacuum chamber maintained at a pressure within a range of over 500 milliTorr to about 50 Torr to provide a silicon oxide removal rate of about 0.2 to about 1 micron/minute.

10. The process of claim 9 wherein said high pressure plasma etching process is operated within a pressure range of from about 1 Torr to about 20 Torr.

20. The process of claim 9 wherein said process further comprises flowing one or more sources of silicon, one or more sources of oxygen, and an optional inert gas through the chamber.

13. A plasma-assisted low pressure CVD process for depositing materials selected from the group consisting of silicon oxide and silicon nitride used in the fabrication of integrated circuit devices on semiconductor wafers characterized by the generation, in a vacuum deposition chamber of a plasma using one or more power sources having a frequency range of from about 100 MHz up to about 250 MHz to provide a sheath voltage low enough to avoid risk of damage to devices on said wafer during said deposition process and maintained at a power density level ranging from about 30 to about 76 watts/inch² of wafer area in a vacuum deposition chamber containing an anode and a wafer mounted on a cathode spaced from said anode a distance of from about 5 to about 30 cm., said vacuum chamber maintained at a pressure within a range of from about 2 to about 500 milliTorr to provide a deposition rate of from about 0.1 to about 1.5 microns/minute.

14. The process of claim 13 wherein said pressure in said chamber ranges from about 20 to about 200 milliTorr.

15. The process of claim 14 wherein said power density ranges from about 45 to about 56 watts/in² of wafer area.

16. The process of claim 15 which further comprises flowing one or more sources of silicon, one or more sources of oxygen, and an optional inert gas through said chamber while said plasme is ignited therein.

17. The process of claim 13 which further comprises flowing one or more sources of silicon, one or more sources of nitrogen, an optional source of hydrogen, and an optional inert gas through said chamber while said plasma is ignited there.

18. A plasma-assisted high pressure CVD conformal isotropic process for depositing materials selected from the group consisting of silicon oxide and silicon nitride used in the fabrication of integrated circuit devices on semiconductor wafers characterized by the generation, in a vacuum deposition chamber of a plasma using one or more power sources having a frequency range of from about 150 MHz up to about 800 MHz to provide a sheath voltage low enough to avoid risk of damage to devices on said wafer during said deposition process and maintained at a power density level ranging from about 10 to about 38 watts/inch² of wafer area in a vacuum etching chamber containing an anode and a wafer mounted ona cathode spaced from said anode a distance of from about 0.2 to about 5 cm., said vacuum chamber maintained at a pressure within a range of over 500 milliTorr to about 50 Torr to provide a deposition rate of from about 0.5 to about 1.0 microns/minute.

19. The process of claim 18 which further comprises maintaining a pressure in said chamber ranging from about 1 Torr to about 20 Torr.

21. The process of claim 19 wherein said process further comprises flowing one or more sources of silicon, one or more sources of nitrogen, an optional source of hydrogen, and an optional inert gas through the chamber.

22. A low pressure plasma-assisted RIE process for anisotropically etching a material selected from the group consisting of aluminum and polysilicon in the fabrication of integrated circuit devices on semiconductor wafers characterized by the generation, in a vacuum etching chamber, of a plasma using a power source having a frequency range of from about 150 MHz up to about 600 MHz to provide a sheath voltage low enough to avoid risk of damage to devices on said wafer during said etching and maintained at a power density level ranging from about 20 to about 40 watts/inch² of wafer area, while flowing a mixture of one or more chlorine-containing gases and one or more inert gases into said vacuum etching chamber containing an anode and a wafer mounted on a cathode and maintained at a pressure within a range of from about 2 to about 500 milliTorr to provide an aluminum or polysilicon etch rate of froma bout 0.2 to about 1 microns per minute.

23. The process of claim 22 wherein said pressure in said chamber ranges from about 20 to about 200 milliTorr.

24. The process of claim 23 wherein said anode and cathode electrodes have a ratio of anode to cathode area of from about 2:

1 to about 20;

1 and an anode to cathode spacing of from about 5 to about 30 cm.

25. A plasma-assisted high pressure process for etching a material selected from the group consisting of aluminum and polysilicon in the fabrication of integrated circuit devices on semiconductor wafers characterized by the generation, in a vacuum etching chamber, of a plasma using one or more power sources having a frequency range of from about 100 MHz up to about 200 MHz to provide a sheath voltage low enough to avoid risk of damage to devices on said wafer during said etching and maintained at a power density level ranging from about 20 to about 40 watts/inch² of wafer area, while flowing one or more chlorine-containing gases and one or more inert gases into said vacuum etching chamber containing an anode and a wafer mounted on a cathode psaced from said anode a distance ranging from about 0.2 to less than about 5 cm., said vacuum chamber maintained at a pressure within a range of over 500 milliTorr to about 50 Torr to provide an aluminum or polysilicon removal rate of about 0.2 to about 1 micron/minute.

26. The process of claim 25 wherein said high pressure plasma etching process is operated within a pressure range of from about 1 Torr to about 20 Torr.