Transistor with an offset gate structure

• US 5,302,845 A
• Filed: 09/15/1993
• Issued: 04/12/1994
• Est. Priority Date: 08/29/1990
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Mizuno, Tomohisa, Kumagai, Jumpei
• Primary Examiner(s): Lee, John D.
• Assistant Examiner(s): Wise, Robert E.
• Application Number:
  US08/121,292
• Time in Patent Office: 209 Days
• Field of Search: 357/23.4, 357/327, 357/328, 357/329
• US Class Current: 257/327
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/66575 where the source and drain or source and drain extensions are self-aligned to the sides of the gate H01L29/66606 takes precedence
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7838 without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

At the surface of a p-type silicon substrate, n-type source/drain diffused layers are formed. On the substrate between the source/drain diffused layers, a gate insulating film made of a silicon oxide film is formed so as to be isolated from the diffused layers. A gate electrode is formed on the gate insulating film. Sidewalls are formed on the sides of the gate insulating film and gate electrode, extending upward from the substrate. In this invention, the sidewalls are composed of material whose permittivity is higher than that of the gate insulating film, for example, of a silicon nitride film.

Claims

1. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type which are formed at the main surface of said substrate and which have a first impurity concentration;

a gate insulating film which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a gate electrode formed on said gate insulating film;

first sidewalls which are formed on the sides of said gate insulating film and said gate electrode, extending upward from said substrate and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator;

second sidewalls which are formed on the sides of said first sidewalls, extending upward from said substrate and which are composed of said second insulator; and

a third and fourth diffused layers of the second conductivity type which are formed in said first and second diffused layers and which have a second impurity concentration higher than said first impurity concentration, with the interface with said first and second diffused layers being placed below said second sidewalls.

2. The semiconductor device according to claim 1, further comprising:

a diffused layer of the second conductivity type formed in the substrate between said first and second diffused layers.

3. The semiconductor device according to claim 2, wherein said gate insulating film is composed of a silicon oxide film and said first sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

4. The semiconductor device according to claim 1, wherein said first insulator is composed of a stacked insulating film consisting of multiple types of insulating materials.

5. The semiconductor device according to claim 4, wherein said stacked insulating film is composed of a silicon oxide film and a silicon nitride film stacked in that order on said substrate, and said first sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

6. The semiconductor device according to claim 1, wherein said gate insulating film is composed of a silicon oxide film and said first sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

7. The semiconductor device according to claim 1, further comprising:

a silicide layer formed in said first and second diffused layers.

8. The semiconductor device according to claim 7, wherein said first gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

9. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

first and second diffused layers of a second conductivity type formed at the main surface of said substrate;

a gate insulating film which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a gate electrode formed on said gate insulating film;

sidewalls which are formed on and along the sides of said gate insulating film and said gate electrode, extending upward from said substrate, and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator;

offset regions within said substrate under said sidewalls, and indicating the same conductivity type as the substrate when no voltage difference exists between said gate electrode and said substrate and a conductivity opposite to that of said substrate when a voltage difference exists between the gate electrode and the substrate; and

silicide layers formed in said first and second diffused layers.

10. The semiconductor device according to claim 9, further comprising:

a diffused layer of the second conductivity type formed in the substrate between said first and second diffused layers.

11. The semiconductor device according to claim 10, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

12. The semiconductor device according to claim 9, wherein said first insulator is composed of a stacked insulating film consisting of multiple types of insulating materials.

13. The semiconductor device according to claim 12, wherein said stacked insulating film is composed of a silicon oxide film and a silicon nitride film stacked in that order on said substrate, and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

14. The semiconductor device according to claim 9, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

15. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type formed at the main surface of said substrate;

a gate insulating film of a first film equivalent oxide thickness, which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from these first and second diffused layers;

a gate electrode formed on said gate insulating film;

an insulating film which is formed on the sides of said gate insulating film and said gate electrode, extending upward from said substrate, and which has a second film equivalent oxide thickness thinner than the first film equivalent oxide thickness of said gate insulating film; and

sidewalls which are formed on said insulating film and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator.

16. The semiconductor device according to claim 15, further comprising:

a diffused layer of the second conductivity type formed in the substrate between said first and second diffused layers.

17. The semiconductor device according to claim 16, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

18. The semiconductor device according to claim 15 wherein said first insulator is composed of a stacked insulating film consisting of multiple types of insulating materials.

19. The semiconductor device according to claim 18, wherein said stacked insulating film is composed of a silicon oxide film and a silicon nitride film stacked in that order on said substrate, and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

20. The semiconductor device according to claim 15, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

21. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type formed at the main surface of said substrate;

a gate insulating film of a first film thickness, which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from these first and second diffused layers;

an insulating film which is composed of the first insulator the same as said gate insulating film and formed on the sides of said gate insulating film, extending upward from said substrate, and which has a second film thickness thinner than the first film thickness of said gate insulating film;

a gate electrode formed on said gate insulating film; and

sidewalls which are formed on the sides of said gate insulating film and said gate electrode above said insulating film, extending upward from said substrate, and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator.

22. The semiconductor device according to claim 21, further comprising:

a diffused layer of the second conductivity type formed in the substrate between said first and second diffused layers.

23. The semiconductor device according to claim 22, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

24. The semiconductor device according to claim 21, wherein said first insulator is composed of a stacked insulating film consisting of multiple types of insulating materials.

25. The semiconductor device according to claim 24, wherein said stacked insulating film is composed of a silicon oxide film and a silicon nitride film stacked in that order on said substrate, and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

26. The semiconductor device according to claim 21, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

27. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type formed at the main surface of said substrate;

a gate insulating film which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a gate electrode formed on said gate insulating film so as to partly extend beyond the gate insulating film; and

sidewalls which are formed on the sides of said gate electrode, extending upward from said substrate, so as to fill up a clearance between said gate electrode and substrate caused by said gate electrode extending beyond said gate insulating film and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator.

28. The semiconductor device according to claim 27, further comprising:

a diffused layer of the second conductivity type formed in the substrate between said first and second diffused layers.

29. The semiconductor device according to claim 28, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

30. The semiconductor device according to claim 27, wherein said first insulator is composed of a stacked insulating film consisting of multiple types of insulating materials.

31. The semiconductor device according to claim 30, wherein said stacked insulating film is composed of a silicon oxide film and a silicon nitride film stacked in that order on said substrate, and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

32. The semiconductor device according to claim 27, wherein said gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

33. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type formed at the main surface of said substrate;

a first gate insulating film which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a floating gate electrode formed on said first gate insulating film;

a second gate insulating film formed on said floating gate electrode;

a control gate electrode formed said second gate insulating film; and

sidewalls which are formed on and along the sides of said first gate insulating film, floating gate electrode, second gate insulating film, and control gate electrode in that order, extending upward from said substrate, and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator.

34. The semiconductor device according to claim 33, wherein said first gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

35. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type which is formed at the main surface of said substrate and which have a first impurity concentration;

a first gate insulating film which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a floating gate electrode formed on said first gate insulating film;

a second gate insulating film formed on said floating gate electrode;

a control gate electrode formed on said second gate insulating film;

first sidewalls which are formed on and along the sides of said first gate insulating film, floating gate electrode, second gate insulating film, and control gate electrode in that order, extending upward from said substrate, and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator;

second sidewalls which are composed of said second insulator and formed on the sides of said first sidewalls, extending upward from said substrate; and

a third and fourth diffused layers of a second conductivity type which are formed in said first and second diffused layers and which have a second impurity concentration higher than said first impurity concentration, with the interface with said and second diffused layers being placed below said first second sidewalls.

36. The semiconductor device according to claim 35, wherein said first gate insulating film is composed of a silicon oxide film and said first sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

37. The semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type which is formed at the main surface of said substrate;

a first gate insulating film of a first film equivalent oxide thickness which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a floating gate electrode formed on said first gate insulating film;

a second gate insulating film formed on said floating gate electrode;

a control gate electrode formed on said second gate insulating film;

insulating films which are formed on and along the sides of said first gate insulating film, floating gate electrode, second gate insulating film, and control gate electrode in that order, extending upward from said substrate, and which have a second film equivalent oxide thickness thinner than the first film equivalent oxide thickness of said first gate insulating film; and

sidewalls which are formed on the sides of said first insulating films and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator.

38. The semiconductor device according to claim 37, wherein said first gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

39. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type which is formed at the main surface of said substrate;

a first gate insulating film of a first film thickness which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from these first and second diffused layers;

insulating films which are composed of the first insulator the same as said first gate insulating film and formed on the sides of said first gate insulating film, extending upward from said substrate, and which have a second film thickness thinner than the first film thickness of said first gate insulating film;

a floating gate electrode formed on said first gate insulating film;

a second gate insulating film formed on said floating gate electrode;

a control gate electrode formed on said second gate insulating film; and

sidewalls which are formed on and along the sides of said first gate insulating film, floating gate electrode, second gate insulating film, and control gate electrode in that order, extending upward from said substrate, and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator.

40. The semiconductor device according to claim 39, wherein said first gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

41. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type formed at the main surface of said substrate;

a first gate insulating film which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a floating gate electrode formed on said first gate insulating film so as to partly extend beyond the insulating film;

a second gate insulating film formed on said floating gate electrode;

a control gate electrode formed on said second gate insulating film; and

sidewalls which are formed on and along the sides of said floating gate electrode, second gate insulating film, and control gate electrode in that order, extending upward from said substrate, so as to fill up a clearance between said gate electrode and substrate caused by said gate electrode extending beyond said gate insulating film and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator.

42. The semiconductor device according to claim 41, wherein said first gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.

43. A semiconductor device comprising:

a semiconductor substrate of a first conductivity type having a main surface;

a first and second diffused layers of a second conductivity type formed at the main surface of said substrate;

a first gate insulating film which is composed of a first insulator with a first permittivity and formed on the substrate between said first and second diffused layers so as to be isolated from the first and second diffused layers;

a first gate electrode formed on said first gate insulating film;

first sidewalls which are formed on the sides of said first gate insulating film and first gate electrode, extending upward from said substrate, and which are composed of a second insulator with a second permittivity higher than the first permittivity of said first insulator;

a third and fourth diffused layers of the second conductivity formed at the main surface of said substrate;

a second gate insulating film formed on the substrate between said third and fourth diffused layers so as to overlap with these third and fourth diffused layers;

a second gate electrode formed on said second gate insulating film; and

second sidewalls formed on the sides of said second gate insulating film and second gate electrode, extending upward from said substrate.

44. The semiconductor device according to claim 43, wherein said first gate insulating film is composed of a silicon oxide film and said sidewalls are composed of any one of a silicon nitride film, tantalum oxide film, hafnium oxide film, yttrium oxide film, and PZT film.