Magnetoresistance effect element and magnetoresistance effect sensor

• US 5,304,975 A
• Filed: 10/22/1992
• Issued: 04/19/1994
• Est. Priority Date: 10/23/1991
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ohto, Toshihiko, Ohsawa, Yuichi, Saito, Yoshiaki, Iwasaki, Hitoshi, Akiyama, Junichi, Hashimoto, Susumu, Inomata, Koichiro, Kondoh, Reiko
• Primary Examiner(s): Lateef, Marvin M.
• Application Number:
  US07/965,073
• Time in Patent Office: 544 Days
• Field of Search: 338/32 R, 324/252, 360/113
• US Class Current: 338/32.00R
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.

Claims

1. A magnetoresistance effect element comprising:

a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect; and

a reversal assist layers, formed in contact with said multilayer, to assist reversal of a magnetic moment of said magnetic layer.

2. An element according to claim 1, wherein said reversal assist layer has a softer magnetism than that of said multilayer.

3. An element according to claim 1, wherein said reversal assist layer has a film thickness larger than that of said magnetic layers of said multilayer.

4. An element according to claim 1, wherein said magnetic layers of said multilayer contain Fe, Co, Ni, or an alloy containing Fe, Co, or Ni.

5. An element according to claim 1, wherein said nonmagnetic layer of said multilayers contain Cr, Ru, Cu, Al, Ag, Au, or an alloy containing Cr, Ru, Cu, Al, Ag, or Au.

6. An element according to claim 1, wherein said magnetic layers of said multilayer have a film thickness of 0.1 nm to 10 nm.

7. An element according to claim 1, wherein said nonmagnetic layers of said multilayer have a film thickness of 0.5 nm to 10 nm.

8. An element according to claim 1, wherein said reversal assist layer is disposed on an outerend portion of said multilayer and contacts to said magnetic layer of said multilayer.

9. An element according to claim 1, wherein said reversal assist layer is interposed between a substrate and said multilayer, and contacts to said nonmagnetic layer of said multilayer.

10. An element according to claim 1, further comprising another reversal assist layer and/or another multilayer.

11. An element according to claim 1, wherein at least one of said reversal assist layers is interposed between two of said magnetic layers, said magnetic layer and said nonmagnetic layer, or two of said nonmagnetic layers of said multilayer.

12. A magnetoresistance effect element comprising:

a first multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect; and

a second multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a saturation field larger than that of said first multilayer, wherein

said second multilayer is formed on at least an end portion of said first multilayer to apply a bias magnetic field to said first multilayer.

13. An element according to claim 12, wherein each second multilayer applies a longitudinal magnetic field to said first multilayer.

14. An element according to claim 12, wherein each of said magnetic layers of said first and second multilayers has a film thickness of 0.5 nm to 5 nm.

15. An element according to claim 12, wherein each of said nonmagnetic layer of said first multilayer and said nonmagnetic layer of said second multilayer has a film thickness of 0.5 nm to 5 nm.

16. An element according to claim 12, wherein said magnetic layer of said first and second multilayers contains Fe, Co, Ni, or an alloy containing Fe, Co, or Ni.

17. An element according to claim 12, wherein said nonmagnetic layer of said first multilayer has a film thickness larger than that of said nonmagnetic layer of said second multilayer.

18. An element according to claim 12, wherein said magnetic layer of said first multilayer has a magnetic anisotropy.

19. An element according to claim 12, wherein a ratio of the saturation field of said first multilayer to that of said second multilayer is not more than 1/5.

20. A magnetoresistance effect sensor comprising:

a substrate;

a magnetoresistance effect layer having a magnetoresistance effect;

a bias applying layer which is obtained by stacking magnetic and nonmagnetic layers and in which two magnetic layers adjacent to each other with one of said nonmagnetic layers interposed therebetween are antiferromagnetically coupled to apply a bias to said magnetoresistance effect layer; and

a conductive layer formed on said magnetoresistance effect layer or said bias applying layer,

wherein said sensor detects a magnetic field from a change in electric resistance of said magnetoresistance effect layer.

21. A sensor according to claim 20, wherein said bias applying layer applies a longitudinal bias to said magnetoresistance effect layer.