Method and apparatus for direct use of low pressure vapor from liquid or solid precursors for selected area laser deposition

• US 5,306,447 A
• Filed: 12/07/1992
• Issued: 04/26/1994
• Est. Priority Date: 12/04/1989
• Status: Expired due to Fees

• Current Assignee: Board of Regents of the University of Texas System (University of Texas System)
• Original Assignee: Board of Regents of the University of Texas System (University of Texas System)
• Inventors: Lin, Shyh-Nung, Zong, Guisheng, Marcus, Harris L., Tompkins, James V., Birmingham, Britton R.
• Primary Examiner(s): Tentoni, Leo B.
• Application Number:
  US07/987,476
• Time in Patent Office: 505 Days
• Field of Search: 264/22, 264/81, 264/101, 264/259, 425/174.4, 156/242, 156/272.2, 156/272.8, 156/285, 156/379.6, 156/381, 156/382, 427/248.1, 427/255.1, 427/255.2, 427/255.3, 427/294, 427/301, 427/585, 118/50.1, 118/620, 118/728, 219/121.15, 219/121.21, 219/121.29, 219/121.35, 219/121.8, 219/121.85
• US Class Current: 264/497
• CPC Class Codes: B29C 64/153 using layers of powder being selectively joined, e.g. by selective laser sintering or melting
• CPC Class Codes: B29C 64/159 using only gaseous substances, e.g. vapour deposition
• CPC Class Codes: B29C 64/40 Structures for supporting 3D objects during manufacture and intended to be sacrificed after completion thereof
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: B33Y 70/00 Materials specially adapted for additive manufacturing
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C23C 16/047 using irradiation by energy or particles

Abstract

Methods and apparatus for selectively depositing a layer of material from a gas phase to produce a part comprising a plurality of deposited layers. The apparatus includes a computer controlling a directed energy beam, such as a laser, to direct the laser energy into an unheated chamber substantially containing the gas phase to preferably produce photodecomposition or thermal decomposition of the gas phase and selectively deposit material within the boundaries of the desired cross-sectional regions of the part. At least one component of the gas phase is a vapor which condenses at a temperature above the ambient temperature of the chamber. Each such component can exist at a partial pressure no higher than its equilibrium vapor pressure at the chamber ambient temperature. For each cross section, the aim of the laser beam is scanned over a target area and the beam is switched on to deposit material within the boundaries of the cross-section. Each subsequent layer is joined to the immediately preceding layer to produce a part comprising a plurality of joined layers. A catalytic environment can be created proximate or upon the target area to ensure that initial nucleation and renucleation layers are receptive to substantially rapid and uniform growth of decomposed gas phase material at the target location. The catalyst can be placed on the initial substrate layer and/or upon successive layers as the layers are being deposited on the outer surface of the evolving part.

Claims

1. A method of depositing a layer of material on a target area, the method comprising:

preparing a catalytic environment upon the target area;

positioning a gas phase at an ambient temperature proximate to the target area, said gas phase comprising at least one gas phase component which condenses at a temperature above said ambient temperature;

scanning an energy beam across the target area; and

depositing material from said gas phase onto the target area at predetermined scanned locations of said beam in accordance with said catalytic environment upon said target area.

2. The method of claim 1, wherein said preparing step comprises applying a layer of catalyst powder upon said target area.

3. The method of claim 2, wherein said catalyst powder comprises SiC powder mixed with NaCl powder.

4. The method of claim 2, wherein said preparing step is immediately followed by reducing a pressure upon the target area.

5. The method of claim 1, wherein said preparing step comprises modifying a structure of said target area to enhance deposition of said material upon said target area.

7. The method of claim 1, wherein said scanning step comprises:

focusing said energy beam at predetermined boundary locations between the target area and said gas phase; and

thermally decomposing said gas phase at said locations.

8. The method of claim 1, wherein said scanning step comprises:

focusing said energy beam at predetermined boundary locations between the target area and said gas phase; and

photodecomposing said gas phase at said locations.

6. The method of claim I, wherein said preparing step comprises introducing a catalyst gas phase component into said gas phase proximate to said target area.

9. A method of depositing a layer of material onto a substrate, comprising:

providing a substrate having a surface layer;

preparing a catalytic composition upon at least a portion of said surface layer;

positioning a gas phase at an ambient temperature proximate to said substrate, said gas phase comprising at least one gas phase component which condenses at a temperature above said ambient temperature;

scanning an energy beam across said surface layer; and

depositing material from said gas phase onto said surface layer at predetermined scanned locations of said beam in quantity according to said catalytic composition.

10. The method of claim 9, wherein said substrate is flat.

11. The method of claim 9, wherein said substrate is curved.

12. The method of claim 9, wherein said providing step is immediately followed by reducing a pressure upon said surface layer.

13. The method of claim 9, wherein said preparing step comprises applying a layer of catalyst powder upon said surface layer, said catalyst powder comprising SiC powder mixed with NaCl powder.

14. The method of claim 9, wherein said preparing step comprises chemically modifying atomic bonds of said surface layer to enhance deposition of said material upon said surface layer.

15. The method of claim 9, wherein said preparing step comprises mechanically modifying a surface texture of said surface layer to enhance deposition of said material upon said surface layer.

16. A method of depositing a layer of material, comprising:

providing a part having an outer layer;

positioning a gas phase at an ambient temperature proximate said outer layer, said gas phase comprising at least one gas phase component which condenses at a temperature above ambient temperature;

introducing a predetermined concentration of a catalyst gas into said gas phase;

scanning an energy beam across said outer layer; and

depositing material from said gas phase onto said outer layer at predetermined scanned locations of said beam in accordance with said catalytic gas concentration within said gas phase.

17. The method of claim 16, wherein said providing step is immediately followed by reducing a pressure upon said outer layer.

18. The method of claim 16, wherein said introducing step comprises injecting said catalyst gas into a chamber containing said part having an outer layer, said gas phase and said energy beam.

19. The method of claim 16, wherein said catalyst gas comprises atomic hydrogen.

20. The method of claim 16, wherein said catalyst gas comprises atomic oxygen.

21. The method of claim 16, wherein said gas phase comprises at least one gas selected from the group consisting of organometallic, hydrocarbon, chloride, fluoride, oxide, nitride and polymer precursor gases.

22. A method of producing a part upon a substrate, comprising:

providing a sealable chamber;

placing a substrate within said sealable chamber, said substrate having an outer surface layer;

preparing a catalytic composition upon a portion of said surface layer;

introducing a gas phase at an ambient temperature into said sealable chamber and proximate said surface layer, said gas phase comprising at least one gas phase component which condenses at a temperature above ambient temperature;

scanning an energy beam across said surface layer;

depositing material from said gas phase onto said surface layer in a three dimensional growth pattern at predetermined scanned locations of said beam at rates consistent with said catalytic composition concentration;

introducing a predetermined concentration of a catalyst gas phase component into said sealable chamber and within said gas phase;

scanning said energy beam across said surface layer;

depositing material from said gas phase onto said surface layer in a three dimensional growth pattern at predetermined scanned locations of said beam at rates consistent with said catalyst gas concentration; and

repeating the last two steps to deposit successive layers of materials comprising said part.

23. The method of claim 22, wherein said providing step comprises providing said sealable chamber at least partially evacuated.

24. The method of claim 22, wherein said depositing step comprises depositing said material in a substantially smooth deposited layer.

25. The method of claim 24, wherein said deposited layer comprises substantially uniformly deposited material having less than 1% variation in thickness at said locations.

26. An apparatus for producing a part, comprising:

a chamber at an ambient temperature containing at least one gas phase component which condenses at a temperature above said ambient temperature;

a target area within said chamber;

a catalyst formed upon said target area; and

at least one energy beam directed upon said target area to selectively nucleate and renucleate said at least one gas phase component influenced by said catalyst upon said target area to form a part.

27. The apparatus of claim 26, wherein said catalyst comprises a catalyst powder placed upon said target area.

28. The apparatus of claim 26, wherein said catalyst comprises means for modifying a structure of said target area.

29. The apparatus of claim 26, wherein said catalyst comprises a catalyst gas phase component within said chamber.

30. The apparatus of claim 26, wherein said chamber is at least partially evacuated.

31. A method of depositing a layer of material on a target area, the method comprising:

positioning a gas phase at an ambient temperature proximate to the target area, said gas phase comprising at least one gas phase component which condenses at a temperature above ambient temperature;

scanning an energy beam across the target area; and

depositing material from said gas phase onto the target area at predetermined scanned locations of said beam upon the target area.

32. The method of claim 31, wherein said positioning step is immediately preceded by reducing a pressure upon the target area.

33. The method of claim 31, wherein said scanning step comprises:

focusing said energy beam at predetermined boundary locations between the target area and said gas phase; and

thermally decomposing said gas phase component at said locations.

34. The method of claim 31, wherein said scanning step comprises:

focusing said energy beam at predetermined boundary locations between the target area and said gas phase; and

photodecomposing said gas phase component at said locations.

35. A method of depositing a layer of material onto a substrate, comprising:

providing a substrate having a surface layer;

positioning a gas phase at an ambient temperature proximate to said substrate, said gas phase comprising at least one gas phase component which condenses at a temperature above said ambient temperature;

scanning an energy beam across said surface layer; and

depositing material from said gas phase onto said surface layer at predetermined scanned locations of said beam.

36. The method of claim 35, wherein said substrate is flat.

37. The method of claim 35, wherein said substrate is curved.

38. The method of claim 35, wherein said providing step is immediately followed by reducing a pressure upon said surface layer.

39. A method of depositing a layer of material, comprising:

providing a part having an outer layer;

positioning a gas phase at an ambient temperature proximate said outer layer, said gas phase comprising at least one gas phase component which condenses at a temperature above ambient temperature;

scanning an energy beam across said outer layer; and

depositing material from said gas phase component onto said outer layer at predetermined scanned locations of said beam.

40. The method of claim 39, wherein said providing step is immediately followed by reducing a pressure upon said outer layer.

41. The method of claim 39, wherein said gas phase comprises at least one gas phase component selected from the group consisting of organometallic, hydrocarbon, chloride, fluoride, oxide, nitride and polymer precursor gases.

42. A method of producing a part upon a substrate, comprising:

providing a sealable chamber;

placing a substrate within said sealable chamber, said substrate having an outer surface layer;

introducing a gas phase at ambient temperature into said sealable chamber and proximate said surface layer, said gas phase comprising at least one gas phase component which condenses at a temperature above said ambient temperature;

scanning an energy beam across said surface layer;

depositing material from said gas phase component onto said surface layer in a three dimensional growth pattern at predetermined scanned locations of said beam; and

repeating the introducing, scanning and depositing steps to deposit successive layers of materials comprising said part.

43. The method of claim 42, wherein said providing step comprises providing said sealable chamber at least partially evacuated.

44. The method of claim 42, wherein said depositing step comprises depositing said material in a substantially smooth deposited layer.

45. The method of claim 44, wherein said deposited layer comprises substantially uniformly deposited material having less than 1% variation in thickness at said locations.

46. An apparatus for producing a part, comprising:

a gas-filled chamber at an ambient temperature, said gas comprising at least one gas phase component which condenses above said ambient temperature;

a target area within said chamber; and

at least one energy beam directed upon said target area to selectively nucleate and renucleate said gas phase component.

47. The apparatus of claim 46, wherein said gas-filled chamber is at least partially evacuated.