Method for manufacturing a solar cell from a substrate wafer
First Claim
1. A method for manufacturing a solar cell from a substrate wafer, comprising the steps of:
- (a) stripping a self-supporting layer of n-doped, monocrystalline silicon by electrochemical etching from a substrate wafer of n-doped, monocrystalline silicon, said stripping comprising the steps of --;
(1) forming holes in a first surface of the substrate wafer by electrochemical etching;
(2) modifying the process parameters of the etching when a depth of the holes which essentially corresponds to thickness of the self-supporting layer has been reached such that the cross section of the holes is enlarged and further such that the self-supporting layer is stripped as a result of the holes growing together;
(b) producing at least one pn-junction in the self-supporting layer; and
(c) providing the self-supporting with contacts such that the pn-junction may be connected as a solar cell.
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Accused Products
Abstract
A self-supporting layer of n-doped monocrystalline silicon is stripped from a substrate wafer of n-doped, monocrystalline silicon by electrochemical etching for manufacturing a solar cell. Holes are formed in the substrate wafer by electrochemical etching, particularly in a fluoride-containing, acidic electrolyte wherein the substrate wafer is connected as an anode. When a depth of the holes that essentially corresponds to the thickness of the self-supporting layer is reached, the process parameters of the etching are modified such that the self-supporting layer is stripped as a consequence of the holes growing together. The solar cell is manufactured from the self-supporting layer, and the method can be applied repeatedly on the same substrate wafer for stripping a plurality of self-supporting layers.
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Citations
20 Claims
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1. A method for manufacturing a solar cell from a substrate wafer, comprising the steps of:
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(a) stripping a self-supporting layer of n-doped, monocrystalline silicon by electrochemical etching from a substrate wafer of n-doped, monocrystalline silicon, said stripping comprising the steps of --; (1) forming holes in a first surface of the substrate wafer by electrochemical etching; (2) modifying the process parameters of the etching when a depth of the holes which essentially corresponds to thickness of the self-supporting layer has been reached such that the cross section of the holes is enlarged and further such that the self-supporting layer is stripped as a result of the holes growing together; (b) producing at least one pn-junction in the self-supporting layer; and (c) providing the self-supporting with contacts such that the pn-junction may be connected as a solar cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification