Process for forming a thin metal film by chemical vapor deposition

• US 5,306,666 A
• Filed: 07/21/1993
• Issued: 04/26/1994
• Est. Priority Date: 07/24/1992
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Nippon Steel Corporation
• Inventors: Izumi, Hirohiko
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US08/094,226
• Time in Patent Office: 279 Days
• Field of Search: 437/192, 437/245, 437/246, 437/187, 437/189, 427/99, 427/124, 427/255.1, 427/576, 427/595, 427/597
• US Class Current: 438/680
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

When a thin metal film is formed on a substrate at a constant substrate temperature by chemical vapor deposition while alternately and discontinuously introducing a raw material gas and a reducing gas onto the substrate, reducing the raw material gas with the reducing gas on the substrate, thereby conducting chemical vapor deposition, and repeating the chemical vapor deposition to obtain a desired film thickness, a thin metal film having a good surface flatness without any current leakage can be obtained without etching the substrate wafer, and when the reducing gas is excited to excited species by an exciting means at the introduction of the reducing gas and the excited species is used be reduce the raw material gas, a lower substrate temperature can be used and chemical vapor deposition process time can be made shorter than without using the exciting means.

Claims

1. A process for forming a thin metal film on a substrate by chemical vapor deposition, which comprises alternately and discontinuously introducing a raw material gas and a reducing gas onto a substrate, reducing the raw material gas with the reducing gas on the substrate at a constant substrate temperature, thereby conducting chemical vapor deposition on the substrate, and repeating the chemical vapor deposition, thereby forming a thin metal film having a desired thickness on the substrate.

2. A process according to claim 1, wherein the raw material gas is one of metal halides and organometallic compounds, and the reducing gas is one of gases capable of decomposing the raw material gas to its constituent metal.

3. A process according to claim 1, wherein the raw material gas is a tungsten hexafluoride gas and the reducing gas is a hydrogen gas.

4. A process according to claim 1, wherein the chemical vapor deposition is carried out at a constant substrate temperature of 400°

to 500°

C. in a reduced pressure.

5. A process according to claim 1, wherein the reducing gas is excited into its excited species by an exciting means at the introduction of the reducing gas, and the raw material gas is reduced by the excited species.

6. A process according to claim 5, wherein the exciting means is RF-induced plasma, electronic cyclotron resonance or ultraviolet ray.

7. A process according to claim 6, wherein the chemical vapor deposition is carried out at a constant substrate temperature of room temperature to less than 400°

C.

8. A process according to claim 1, wherein the substrate is a semiconductor device substrate.