Method for producing semiconductor film
First Claim
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1. A method for producing a semiconductor single crystal film comprising the steps of:
- (a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer;
(b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate;
(c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein;
(d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein; and
(e) separating said first substrate from said second substrate.
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Abstract
A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
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19 Claims
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1. A method for producing a semiconductor single crystal film comprising the steps of:
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(a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein; and (e) separating said first substrate from said second substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for producing a semiconductor single crystal film comprising the steps of:
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(a) preparing a first substrate and a second substrate, wherein said first substrate is essentially constituted by a single crystal and having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion so as to crystallize said molten portion of said semiconductor layer while imparting a crystal orientation of single crystal of said first substrate to said molten portion thereby to form a single crystal semiconductor structure in said molten portion; and (e) separating said first substrate from said second substrate. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification