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Method for producing semiconductor film

  • US 5,310,446 A
  • Filed: 07/13/1992
  • Issued: 05/10/1994
  • Est. Priority Date: 01/10/1990
  • Status: Expired due to Term
First Claim
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1. A method for producing a semiconductor single crystal film comprising the steps of:

  • (a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer;

    (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate;

    (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein;

    (d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein; and

    (e) separating said first substrate from said second substrate.

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