Process of making a solid state microanemometer

• US 5,310,449 A
• Filed: 07/22/1993
• Issued: 05/10/1994
• Est. Priority Date: 12/12/1990
• Status: Expired due to Fees

• Current Assignee: University of Cincinnati
• Original Assignee: University of Cincinnati
• Inventors: Henderson, H. Thurman
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/095,948
• Time in Patent Office: 292 Days
• Field of Search: 156/628, 156/643, 156/647, 156/648, 156/651, 156/653, 156/654, 156/657, 156/659.1, 156/662, 29/25.35, 29/620, 29/621.1, 73/514, 73/517 R, 73/727, 73/517 AV, 73/517 A, 437/225, 437/228, 437/238, 437/901, 437/918, 437/921, 437/986
• US Class Current: 438/53
• CPC Class Codes: G01F 1/6845 Micromachined devices
• CPC Class Codes: G01P 13/02 Indicating direction only, e.g. by weather vane
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
• CPC Class Codes: G01P 5/12 using variation of resistance of a heated conductor
• CPC Class Codes: Y10S 438/924 To facilitate selective etching

Abstract

A solid state microanemometer is micromachined from a crystal to a shape with four thick external sides that define an outer rectangle, four thin sections that define an inner rectangle and four diagonally directed branches interconnecting the corners of the outer rectangle to the inner rectangle. Four semiconductor resistors located on the four inner sections form a sensing bridge. Each external side has a pair of electrical contacts that are electrically interconnected, via conductive leads that extend along the diagonal branches and partially along the inner sections, to one of the semiconductor resistors. The physically connected semiconductor resistors and external sides form a rugged solid state device, while thermal and electrical isolation of the resistors from each other permits higher operating temperatures and improved fluid flow sensing capability.

Claims

1. A method of forming a microanemometer comprising the step of:

selectively processing selected parts of a single semiconductor crystal to form a fluid flow sensing bridge with at least one semiconductor resistor, each semiconductor resistor in the sensing bridge being thermally and electrically isolated from every other semiconductor resistor in the sensing bridge.

2. The method of claim 1 and further comprising the steps of:

selectively etching top and bottom surfaces of the crystal to a desired shape with four external sides defining an outer rectangle, four inner sections defining an inner rectangle, four branches interconnecting corners of the inner and outer rectangles and a membrane spanning between the four sides beneath the inner sections, the sensing bridge being located on the inner rectangle; and

oxidizing selected parts of the crystal to isolate the semiconductor resistors from other thermally conductive and electrically conductive parts of the crystal.

3. The method of claim 2 and further comprising the step of:

depositing electrically conductive contact material on selected portions of the external sides, branches and inner sections, each resistor aligned along an inner section between and below parallel portions of conductive material.

4. The method of claim 2 wherein the crystal is etched to provide external sides thicker than the inner sections and inner sections thicker than the branches.

5. The method of claim 3 and further comprising the step of:

electrically connecting the electrically conductive contact material to at least one external electrical component to measure fluid flow across a top surface of the crystal via the sensing bridge.

6. The method of claim 5 wherein the resistors and electrically conductive material reside substantially in a common plane and said electrical connecting step is performed beneath said common plane.

7. The method of claim 6 wherein the electrical connecting step further comprises the step of:

etching through a bottom surface of the crystal to form at least one recess to provide electrical connection access to the bottom surfaces of the contacts.

8. The method of claim 7 and further comprising the step of:

depositing conductive material into the recesses to facilitate electrical connection to the contacts.

9. The method of claim 2 and further comprising the step of:

etching from a top of the crystal to undercut and remove selected thermally and electrically conductive parts of the crystal from under the respective branches.

10. The method of claim 9 wherein the undercutting etching step is performed for a sufficiently long time duration to also remove thermally and electrically conductive material from underneath corners of the inner rectangle, thereby to thermally and electrically isolate each resistor from the other resistors.

11. The method of claim 9 and wherein the undercutting etching step is performed with a first etchant and further comprising the step of:

selectively etching a region of the top surface of the crystal with a second etchant to selectively remove thermally and electrically conductive parts of the crystal from underneath the corners of the inner rectangle to thermally and electrically isolate each of the resistors.

12. The method of claim 11 and further comprising the step of:

diffusing, prior to the etching steps, an n⁺ material into the regions of the crystal adjacent positions where the corners of the inner rectangle will eventually be located, the n⁺ diffused regions of the crystal being particularly susceptible to etching by the second etchant, thereby to promote selective undercutting of the corners of the inner rectangle to thermally and electrically isolate each resistor from the other resistors.